200V to 250V HEXFET® Power MOSFETs

Infineon 200V to 250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.

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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS
Infineon Technologies IRFB4332PBFXKMA1
Infineon Technologies Infineon TRENCH >=100V Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1
Reel: 1.000

Infineon Technologies IRFB4620PBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V
Datasheet
Non-Stocked Lead-Time 19 Weeks
Min.: 1.000
Mult.: 1.000