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NVMYS4D5N04CTWG

Name: onsemi NVMYS4D5N04CTWG
Brand: onsemi
SKU: 863-NVMYS4D5N04CTWG
Price: 30821 IDR
Availability: InStock

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Mouser No:

863-NVMYS4D5N04CTWG

Mfr. No:

NVMYS4D5N04CTWG

Mfr.:

onsemi

Description:

MOSFETs T6 40V SL LFPAK

Datasheet:

NVMYS4D5N04CTWG Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVMYS4D5N04CTWG

In Stock: 2.939

Stock:: 2.939 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp30.821	Rp30.821
	Rp19.630	Rp196.300
	Rp13.062	Rp1.306.200
	Rp10.310	Rp5.155.000
	Rp9.411	Rp9.411.000
Full Reel (Order in multiples of 3000)
	Rp8.641	Rp25.923.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	4.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	18 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	55 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	8 ns
Forward Transconductance - Min:	57 S
Product Type:	MOSFETs
Rise Time:	80 ns
Series:	NVMYS4D5N04C
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	12 ns

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Datasheet

NVMYS4D5N04CTWG Datasheet

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

NVMYS4D5N04C Single N-Channel Power MOSFETs

onsemi NVMYS4D5N04C Single N-Channel Power MOSFETs are engineered for automotive applications and encased in a 5mm x 6mm LFPAK package. The onsemi NVMYS4D5N04C facilitates compact and efficient designs while ensuring high thermal performance. The MOSFETs are AEC-Q101 qualified and PPAP capable for automotive applications that demand enhanced board-level reliability.