Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

Types of Transistors
Change category view
Results: 45
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS Product Type
Technology
Mounting Style
Package/Case
Transistor Polarity


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
Datasheet
85In Stock
Min.: 1
Mult.: 1
Reel: 1.000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
Datasheet
73In Stock
1.200Expected 16/03/2026
Min.: 1
Mult.: 1
Reel: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
Datasheet
594In Stock
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
Datasheet
510In Stock
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole N-Channel
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
Datasheet
1.597In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 3.000

SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
Datasheet
593In Stock
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
Datasheet
90In Stock
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
Datasheet
600Expected 27/07/2026
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
Datasheet
1.200On Order
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
Datasheet
400On Order
Min.: 1
Mult.: 1
Reel: 600

SiC MOSFETS


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
Datasheet
996Expected 22/04/2026
Min.: 1
Mult.: 1
Reel: 1.000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
Datasheet
1.113Expected 10/03/2026
MouseReel Available
Min.: 1
Mult.: 1
Reel: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
Datasheet
844Expected 26/10/2026
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole N-Channel
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
Datasheet
100On Order
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1.000
Mult.: 1.000
Reel: 1.000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1
Reel: 1.000

SiC MOSFETS
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
Datasheet
Non-Stocked Lead-Time 17 Weeks
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
Datasheet
Non-Stocked Lead-Time 17 Weeks
Min.: 1
Mult.: 1

SiC MOSFETS
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP247-3 N-Channel
STMicroelectronics SCT055H65G3AG
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1.000
Mult.: 1.000
Reel: 1.000

SiC MOSFETS