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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Infineon Technologies MOSFETs N-Ch 560V 21A TO220-3
Datasheet
399In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 21 A 190 mOhms - 20 V, 20 V 2.1 V 95 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs N-Ch 650V 24.3A TO247-3 CoolMOS C3
Datasheet
111In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 24.3 A 160 mOhms - 20 V, 20 V 3.9 V 104.9 nC - 55 C + 150 C 240 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 600V 7.3A TO220FP-3 CoolMOS C3
Datasheet
135In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 7.3 A 600 mOhms - 20 V, 20 V 2.1 V 21 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs N-Ch 650V 20.7A TO247-3 CoolMOS C3
Datasheet
27In Stock
1.200Expected 05/03/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20.7 A 190 mOhms - 20 V, 20 V 2.1 V 87 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 560V 21A I2PAK-3
Datasheet
Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-262-3 N-Channel 1 Channel 500 V 21 A 190 mOhms - 20 V, 20 V 3 V 95 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 650V 11A TO220FP-3 CoolMOS C3
Datasheet
Lead-Time 11 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 11 A 380 mOhms - 20 V, 20 V 3.9 V 45 nC - 55 C + 150 C 33 W Enhancement CoolMOS Tube