VSLB4940

Vishay Semiconductors
78-VSLB4940
VSLB4940

Mfr.:

Description:
Infrared Emitters 940nm, T-1 65mW/sr, +/-22deg.

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In Stock: 8.233

Stock:
8.233 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp10.824 Rp10.824
Rp7.522 Rp75.220
Rp5.449 Rp544.900
Rp4.513 Rp2.256.500
Rp3.944 Rp3.944.000
Rp3.853 Rp19.265.000
Rp3.357 Rp33.570.000
Rp3.229 Rp80.725.000

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: Infrared Emitters
RoHS:  
Through Hole
940 nm
65 mW/sr
22 deg
100 mA
1.42 V
160 mW
- 25 C
+ 85 C
T-1 (3 mm)
Brand: Vishay Semiconductors
Fall Time: 15 ns
Illumination Colour: Infrared
Product Type: IR Emitters (IR LEDs)
Rise Time: 15 ns
Series: VSL
Factory Pack Quantity: 5000
Subcategory: Infrared Data Communications
Unit Weight: 233,750 mg
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Attributes selected: 0

CNHTS:
8541410090
USHTS:
8541410000
TARIC:
8541410000
MXHTS:
85415001
BRHTS:
85415020
ECCN:
EAR99

VSLB4940 High-Speed Infrared Emitting Diode

Vishay Semiconductors VSLB4940 High-Speed Infrared Emitting Diode is suitable for high pulse current operation. The VSLB4940 diode offers 940nm peak wavelength, 65mW/sr radiant intensity, ±22° beam angle, 1.42V typical forward voltage, and 15ns fall time. This infrared diode is available in GaAlAs, Multi-quantum Well (MQW) technology, and is molded in a clear plastic package. The VSLB4940 infrared diode comes in a leaded type T-1 package and ∅3mm dimensions. This infrared diode is suitable for applications like infrared remote control units, reflective sensors, and light barriers.