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1ED21271S65FXUMA1

Name: Infineon 1ED21271S65FXUMA1
Brand: Infineon Technologies
SKU: 726-1ED21271S65FXUMA
Price: 42746 IDR
Availability: InStock

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Mouser No:

726-1ED21271S65FXUMA

Mfr. No:

1ED21271S65FXUMA1

Mfr.:

Infineon Technologies

Description:

Gate Drivers 650V high-side gate driver

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

1ED21271S65FXUMA1 Datasheet (PDF)

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In Stock: 2.373

Stock:: 2.373 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp42.746	Rp42.746
	Rp27.519	Rp275.190
	Rp24.584	Rp614.600
	Rp20.364	Rp2.036.400
	Rp19.080	Rp4.770.000
	Rp16.658	Rp8.329.000
	Rp14.493	Rp14.493.000
Full Reel (Order in multiples of 2500)
	Rp13.172	Rp32.930.000
	Rp12.549	Rp94.117.500

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Gate Drivers
RoHS:
Product:	Gate Drivers
Type:	High-Side
Mounting Style:	SMD/SMT
Package/Case:	PG-DSO-8
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	4 A
Supply Voltage - Max:	25 V
Configuration:	Inverting
Rise Time:	12 ns
Fall Time:	12 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Maximum Turn-Off Delay Time:	80 ns
Maximum Turn-On Delay Time:	80 ns
Moisture Sensitive:	Yes
Operating Supply Current:	270 uA
Output Voltage:	460 mV
Pd - Power Dissipation:	625 mW
Product Type:	Gate Drivers
Propagation Delay - Max:	410 ns
Rds On - Drain-Source Resistance:	50 Ohms
Shutdown:	Shutdown
Factory Pack Quantity:	2500
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Tradename:	EiceDRIVER
Part # Aliases:	1ED21271S65F SP005826767

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Datasheet

1ED21271S65FXUMA1 Datasheet (PDF)

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USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

EiceDRIVER™ 1ED21x7x 650V High-Side Gate Drivers

Infineon Technologies EiceDRIVER™ 1ED21x7x 650V High-Side Gate Drivers are designed to provide robust and efficient control for high-voltage power transistors. These Infineon gate drivers feature a high-side driver architecture that supports a wide range of applications, including motor drives, solar inverters, and industrial power supplies. With a maximum voltage rating of 650V, the 1ED21x7x series ensures reliable operation in demanding environments. Key features include integrated bootstrap diodes, fast switching capabilities, and comprehensive protection mechanisms such as undervoltage lockout (UVLO) and overcurrent protection. These attributes make the EiceDRIVER™ 1ED21x7x series an ideal choice for enhancing the performance and reliability of high-voltage power systems.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.