2ED2182S06FXUMA1

Infineon Technologies
726-2ED2182S06FXUMA1
2ED2182S06FXUMA1

Mfr.:

Description:
Gate Drivers LEVEL SHIFT DRIVER

Datasheet:
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Learn more about Infineon Technologies 2ED2182S06FXUMA1

In Stock: 37

Stock:
37
Can Dispatch Immediately
On Order:
2.500
Expected 05/03/2026
2.500
Expected 01/10/2026
Factory Lead Time:
34
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp33.573 Rp33.573
Rp24.767 Rp247.670
Rp22.566 Rp564.150
Rp20.548 Rp2.054.800
Rp19.263 Rp4.815.750
Rp18.896 Rp9.448.000
Rp18.529 Rp18.529.000
Full Reel (Order in multiples of 2500)
Rp17.282 Rp43.205.000
Rp16.566 Rp82.830.000

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Gate Drivers
RoHS:  
IGBT, MOSFET Gate Drivers
Half-Bridge
SMD/SMT
DSO-8
1 Driver
1 Output
2.5 A
10 V
20 V
15 ns
15 ns
- 40 C
+ 125 C
Reel
Cut Tape
Brand: Infineon Technologies
Logic Type: CMOS, LSTTL
Maximum Turn-Off Delay Time: 300 ns
Maximum Turn-On Delay Time: 300 ns
Moisture Sensitive: Yes
Operating Supply Current: 550 uA
Pd - Power Dissipation: 625 mW
Product Type: Gate Drivers
Propagation Delay - Max: 300 ns
Shutdown: Shutdown
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: Si
Part # Aliases: 2ED2182S06F SP003244532
Unit Weight: 233,750 mg
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CNHTS:
8542399000
USHTS:
8542310075
ECCN:
EAR99

Small Home Appliance Solutions

Infineon Small Home Appliance Solutions features a portfolio of products that fit into small home appliance applications. There is a growing trend for style and more efficiency, which designers are addressing with countless variations. Energy-efficient, modern-looking, wipe-clean, and hermetically sealed surfaces are only a few characteristics that a design engineer has to consider and incorporate into new designs. Infineon delivers solutions for several key areas, such as induction heating, as well as appliances that require motor control solutions with energy-efficient, integrated power devices.

2ED210x Low-Current 650V Half-Bridge Gate Drivers

Infineon Technologies 2ED210x Low-Current 650V Half-Bridge Gate Drivers offer an integrated bootstrap diode (BSD) and silicon-on-insulator (SOI) technology in a DSO-8 or DSO-14 package. The high-voltage, level-shift SOI technology in these 0.7A drivers provides robustness against negative transient voltage spikes and lowers level-shift power losses to minimize device-switching power dissipation. The advanced process enables monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits. Infineon Technologies 2ED210x Low-Current 650V Half-Bridge Gate Drivers feature excellent ruggedness and noise immunity against negative transient voltages on the VS pin.

2ED218x High-Current 650V Half-Bridge Gate Drivers

Infineon Technologies 2ED218x High-Current 650V Half-Bridge Gate Drivers feature silicon-on-insulator (SOI) technology and an integrated bootstrap diode (BSD) in a DSO-8 or DSO-14 package. The series combines high current with high speed to drive MOSFETs and IGBTs with typical 2.5A sink and source current. The high-voltage, level-shift SOI technology provides robustness to protect against negative transient voltage spikes and lowers level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits. Infineon Technologies 2ED218x High-Current 650V Half-Bridge Gate Drivers offer ruggedness and noise immunity against negative transient voltages on the VS pin.

Silicon-on-Insulator (SOI) Gate Driver ICs

Infineon Silicon-on-Insulator (SOI) Gate Driver ICs are level-shift high voltage gate driver ICs for IGBTs and MOSFETs. The SOI technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages. These include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

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