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SQJQ140E-T1_GE3

Name: Vishay SQJQ140E-T1_GE3
Brand: Vishay / Siliconix
SKU: 78-SQJQ140E-T1_GE3
Price: 79071 IDR
Availability: InStock

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Mouser No:

78-SQJQ140E-T1_GE3

Mfr. No:

SQJQ140E-T1_GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET

Datasheet:

SQJQ140E-T1_GE3 Datasheet

ECAD Model:

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More Information

Learn more about Vishay / Siliconix SQJQ140E-T1_GE3

In Stock: 3.592

Stock:: 3.592 Can Dispatch Immediately

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Factory Lead Time:: 4 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp79.071	Rp79.071
	Rp53.020	Rp530.200
	Rp37.609	Rp3.760.900
	Rp34.490	Rp17.245.000
Full Reel (Order in multiples of 2000)
	Rp28.069	Rp56.138.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK 1212-8W-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	701 A
Rds On - Drain-Source Resistance:	530 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.3 V
Qg - Gate Charge:	288 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	600 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	48 ns
Product Type:	MOSFETs
Rise Time:	117 ns
Series:	SQJQ
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	93 ns
Typical Turn-On Delay Time:	39 ns

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Datasheet

SQJQ140E-T1_GE3 Datasheet

Models

SQJQ140E-T1_GE3 Symbol & Footprint by SnapMagic

Technical Resources

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

POWERPAK® 1212 MOSFETs

Vishay POWERPAK® 1212 MOSFETs are ideal for switching applications and boast a die-on resistance of approximately 1mΩ and can handle up to 85A. The Vishay POWERPAK 1212 introduces a packaging technology to mitigate the risk of degrading high-performance dies. This package offers ultra-low thermal impedance in a compact design, making it ideal for space-constrained applications.

SQJQ Automotive MOSFETs

Vishay / Siliconix SQJQ Automotive MOSFETs are N-Channel TrenchFET® power MOSFETs. These AEC-Q101-qualified MOSFETs are tested at 100% R_g and Unclamped Inductive Switching (UIS). The Vishay / Siliconix SQJQ Automotive MOSFETs offer very low R_DS(on) and operate within -55°C to +175°C temperature range. These automotive-grade MOSFETs are available in a fully lead (Pb) free PowerPAK® 8x8L package with single/dual configurations. Typical applications include automotive, engine management, motor drives/actuators, body systems, and battery management.