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NVH4L018N075SC1

Name: onsemi NVH4L018N075SC1
Brand: onsemi
SKU: 863-NVH4L018N075SC1
Price: 553132 IDR
Availability: InStock

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Mouser No:

863-NVH4L018N075SC1

Mfr. No:

NVH4L018N075SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-4L 750V

Datasheet:

NVH4L018N075SC1 Datasheet

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Package/Case:	TO-247-4
Tradename:	EliteSiC
Brand:	onsemi
Packaging:	Tube
Product Type:	SiC MOSFETS
Series:	NVH4L018N075SC1
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC

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Datasheet

NVH4L018N075SC1 Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

Compliance Codes

USHTS:: 8541290095
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.