S80KS2564GACHI040

Infineon Technologies
727-S80KS2564GACHI04
S80KS2564GACHI040

Mfr.:

Description:
DRAM SPCM

ECAD Model:
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In Stock: 520

Stock:
520 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp124.386 Rp124.386
Rp118.148 Rp1.181.480
Rp115.580 Rp2.889.500
Rp113.745 Rp5.687.250
Rp111.911 Rp11.191.100
Rp104.022 Rp27.045.720
Rp103.838 Rp53.995.760
2.600 Quote

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: DRAM
RoHS:  
HyperRAM
256 Mbit
16 bit
200 MHz
FBGA-49
35 ns
1.7 V
2 V
- 40 C
+ 85 C
Tray
Brand: Infineon Technologies
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 260
Subcategory: Memory & Data Storage
Supply Current - Max: 20 mA
Part # Aliases: SP005647395
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Attributes selected: 0

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CNHTS:
8542329010
USHTS:
8542320024
ECCN:
3A991.b.2.a

S80KS2562 & S80KS2563 256Mb HYPERRAM™ 2.0 Memory

Infineon Technologies S80KS2562 and S80KS2563 HYPERRAM™ 2.0 Memory are high-speed, low-pin-count, low-power self-refresh Dynamic RAM (DRAM) with a HyperBUS (S80KS2562) or Octal xSPI (S80KS2563) interface. Both devices feature a 200MHz maximum clock rate, a data throughput of up to 400MBps, and energy-saving Hybrid Sleep and Deep Power-Down modes. The S80KS2562 and S80KS2563 HYPERRAM are ideal for use in high-performance embedded systems requiring expansion memory for scratchpad or buffering purposes.