R1RW0408DGE-2PI#B1

Renesas Electronics
968-R1RW0408DGE2PIB1
R1RW0408DGE-2PI#B1

Mfr.:

Description:
SRAM SRAM 4MB FAST X8 3V SOJ 12NS -40TO85C

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
ECAD Model:
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In Stock: 101

Stock:
101 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp246.020 Rp246.020
Rp245.836 Rp5.408.392
Rp228.591 Rp25.145.010
Rp214.832 Rp56.715.648

Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: SRAM
RoHS:  
4 Mbit
12 ns
3.6 V
3 V
100 mA
- 40 C
+ 85 C
SMD/SMT
SOJ-36
Tray
Brand: Renesas Electronics
Memory Type: SRAM
Moisture Sensitive: Yes
Product Type: SRAM
Factory Pack Quantity: 22
Subcategory: Memory & Data Storage
Type: High Speed
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Attributes selected: 0

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CAHTS:
8542320030
USHTS:
8542320041
TARIC:
8542324500
MXHTS:
8542320299
ECCN:
3A991.b.2.a

Asynchronous SRAMs

Renesas Electronics Asynchronous SRAMs are based on high-performance, high-reliability CMOS technology. The technology and innovative circuit design techniques provide a cost-effective solution for high-speed async SRAM memory needs. Fully static asynchronous circuitry requires no clocks or refresh for operation. Renesas delivers asynchronous SRAM in RoHS 6/6-compliant (Green) packaging using industry-standard package options.