MASTERGAN1

STMicroelectronics
511-MASTERGAN1
MASTERGAN1

Mfr.:

Description:
Gate Drivers High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
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Datasheet:
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In Stock: 501

Stock:
501 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 501 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp164.564 Rp164.564
Rp117.414 Rp1.174.140
Rp112.094 Rp2.802.350
Rp97.417 Rp9.741.700
Rp93.014 Rp23.253.500
Rp84.942 Rp42.471.000
Rp75.219 Rp75.219.000
Rp72.650 Rp181.625.000

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
QFN-31
2 Driver
1 Output
10 A
4.75 V
9.5 V
- 40 C
+ 125 C
MASTERGAN
Tray
Brand: STMicroelectronics
Development Kit: EVALMASTERGAN1
Moisture Sensitive: Yes
Operating Supply Current: 680 uA
Product Type: Gate Drivers
Rds On - Drain-Source Resistance: 330 mOhms
Shutdown: Shutdown
Factory Pack Quantity: 1560
Subcategory: PMIC - Power Management ICs
Unit Weight: 120 mg
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Attributes selected: 0

CNHTS:
8542399000
USHTS:
8542390090
ECCN:
EAR99

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.

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