STGH30H65DFB-2AG

STMicroelectronics
511-STGH30H65DFB-2AG
STGH30H65DFB-2AG

Mfr.:

Description:
IGBTs Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT
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Datasheet:
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In Stock: 461

Stock:
461 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp72.283 Rp72.283
Rp47.516 Rp475.160
Rp34.307 Rp3.430.700
Rp30.454 Rp15.227.000
Full Reel (Order in multiples of 1000)
Rp26.235 Rp26.235.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
H2PAK-2
SMD/SMT
Single
650 V
1.55 V
- 20 V, 20 V
60 A
260 W
- 55 C
+ 175 C
AEC-Q101
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
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Attributes selected: 0

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

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