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STW88N65M5-4

Name: STMicroelectronics STW88N65M5-4
Brand: STMicroelectronics
SKU: 511-STW88N65M5-4
Price: 313900 IDR
Availability: InStock

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Mouser No:

511-STW88N65M5-4

Mfr. No:

STW88N65M5-4

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 packag

Complete Your Design

Datasheet:

STW88N65M5-4 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STW88N65M5-4

In Stock: 166

Stock:: 166 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 166 will be subject to minimum order requirements.

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp313.900	Rp313.900
	Rp194.651	Rp1.946.510
	Rp194.101	Rp19.410.100

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	84 A
Rds On - Drain-Source Resistance:	29 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	204 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	450 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	MOSFETs
Series:	Mdmesh M5
Factory Pack Quantity:	600
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	6 g

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Datasheet

STW88N65M5-4 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

N-channel MDmesh V Power MOSFET

STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding R_DS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products to offer greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.