Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

Results: 1.385
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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
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ROHM Semiconductor MOSFETs -100V 4.5A, Dual Pch+Pch, SOP8, Power MOSFET
Datasheet
1.484In Stock
Min.: 1
Mult.: 1
Reel: 2.500

ROHM Semiconductor MOSFETs SOP8 100V 4.5A N-CH MOSFET
Datasheet
3.071In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 2.500

ROHM Semiconductor MOSFETs 100V 8A Dual Nch+Nch, SOP8, Power MOSFET
Datasheet
4.733In Stock
Min.: 1
Mult.: 1
Reel: 2.500

ROHM Semiconductor MOSFETs 100V 4.5A Dual Nch+Pch, SOP8, Power MOSFET
Datasheet
1.718In Stock
Min.: 1
Mult.: 1
Reel: 2.500

ROHM Semiconductor MOSFETs 100V 2.0A Dual Nch+Nch, DFN2020-8D, Power MOSFET
Datasheet
14.502In Stock
Min.: 1
Mult.: 1
Reel: 3.000

ROHM Semiconductor MOSFETs 100V 2.0A/1.0A, Dual Nch+Pch, DFN2020-8D, Power MOSFET
Datasheet
17.088In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 3.000

ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
Datasheet
7.353In Stock
Min.: 1
Mult.: 1
Reel: 4.000

ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp
Datasheet
7.594In Stock
Min.: 1
Mult.: 1
Reel: 4.000

ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 12A, TO-277GE, Highly Efficient SBD
Datasheet
3.980In Stock
Min.: 1
Mult.: 1
Reel: 4.000

ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 12A, TO-277GE, Highly Efficient SBD
Datasheet
3.668In Stock
Min.: 1
Mult.: 1
Reel: 4.000

ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 15A, TO-277GE, Highly Efficient SBD
Datasheet
5.672In Stock
Min.: 1
Mult.: 1
Reel: 4.000

ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 15A, TO-277GE, Highly Efficient SBD
Datasheet
4.095In Stock
Min.: 1
Mult.: 1
Reel: 4.000

ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Datasheet
4.820In Stock
Min.: 1
Mult.: 1
Reel: 2.500

ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
Datasheet
1.900In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1.000

ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Datasheet
1.970In Stock
Min.: 1
Mult.: 1
Reel: 1.000

ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
Datasheet
2.000In Stock
Min.: 1
Mult.: 1
Reel: 1.000

ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Datasheet
1.988In Stock
Min.: 1
Mult.: 1
Reel: 1.000

ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD: The YQ30NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Datasheet
1.908In Stock
Min.: 1
Mult.: 1
Reel: 1.000

ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 3A, TO-277GE, Highly Efficient SBD
Datasheet
3.852In Stock
Min.: 1
Mult.: 1
Reel: 4.000

ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 5A, TO-277GE, Highly Efficient SBD
Datasheet
3.900In Stock
Min.: 1
Mult.: 1
Reel: 4.000

ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 5A, TO-277GE, Highly Efficient SBD
Datasheet
3.955In Stock
Min.: 1
Mult.: 1
Reel: 4.000

ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 8A, TO-277GE, Highly Efficient SBD
Datasheet
3.867In Stock
Min.: 1
Mult.: 1
Reel: 4.000

ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 8A, TO-277GE, Highly Efficient SBD
Datasheet
3.905In Stock
Min.: 1
Mult.: 1
Reel: 4.000

ROHM Semiconductor MOSFETs Transistor, MOSFET Pch, -60V(Vdss), -70A(Id), (4.5V, 6.0V Drive)
Datasheet
37.371In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 2.500

ROHM Semiconductor Schottky Diodes & Rectifiers Schottky Barrier Diode RASMID™ Series, 20V, 2A, SOD-882 (DSN1006-2)
Datasheet
2.692In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 18.000