Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

Types of Discrete Semiconductors
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Results: 314
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STMicroelectronics MOSFETs N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO-247 package
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1

MOSFETs Si Through Hole TO-247-3
STMicroelectronics MOSFETs N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO247-4 packag
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 600
Mult.: 600

MOSFETs Si Through Hole TO-247-4
STMicroelectronics MOSFETs N-Channel 650V 93A 0.019 Ohm Mdmesh M5
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 600
Mult.: 600

MOSFETs Si Through Hole Max247-3
STMicroelectronics MOSFETs N-CH 800V 2.8Ohm typ 2.5A Zener-protected
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 2.000
Mult.: 1.000

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFETs N-channel 1050 V, 2.9 Ohm typ., 3 A MDmesh K5 Power MOSFET in TO-220FP package
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 1.000
Mult.: 1.000

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFETs N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 1.000
Mult.: 1.000

MOSFETs Si Through Hole TO-262-3
STMicroelectronics MOSFETs N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 1.000
Mult.: 1.000
MOSFETs Si Through Hole TO-262-3
STMicroelectronics MOSFETs N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in I2PAK package
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 1.000
Mult.: 1.000

MOSFETs Si Through Hole TO-262-3
STMicroelectronics MOSFETs N-channel 800 V, 1.3 Ohm typ 4.5 A MDmesh K5 Power MOSFET in an I2PAK package
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 1.000
Mult.: 1.000

MOSFETs Si Through Hole TO-262-3
STMicroelectronics MOSFETs N-CH 600V 1.26Ohm typ. 3.7A MDmesh M2
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 2.000
Mult.: 1.000

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFETs N-CH 600V 0.72Ohm 5.5A MDMesh M2
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 2.000
Mult.: 1.000

MOSFETs Si Through Hole TO-220-3

STMicroelectronics MOSFETs N-Ch 950V .28Ohm typ 17.5A Zener-protect
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 600
Mult.: 600

MOSFETs Si Through Hole TO-247-3
STMicroelectronics MOSFETs N-CH 650V 0.037Ohm 58A
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 600
Mult.: 600

MOSFETs Si Through Hole TO-247-4

STMicroelectronics MOSFETs N-Ch 650 V 0.056 Ohm 42 A Mdmesh
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 600
Mult.: 600

MOSFETs Si Through Hole TO-247-3