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IRFB4620PBFXKMA1

Name: Infineon IRFB4620PBFXKMA1
Brand: Infineon Technologies
SKU: 726-IRFB4620PBFXKMA1
Price: 17098 IDR
Availability: OutOfStock

Mouser No:

726-IRFB4620PBFXKMA1

Mfr. No:

IRFB4620PBFXKMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IR FET >60-400V

Datasheet:

IRFB4620PBFXKMA1 Datasheet (PDF)

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Stock:: Non-Stocked

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Factory Lead Time:: 19 Weeks Estimated factory production time.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp17.098	Rp17.098.000
	Rp16.255	Rp32.510.000
	Rp15.704	Rp78.520.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	25 A
Rds On - Drain-Source Resistance:	72.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	144 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	14.8 ns
Forward Transconductance - Min:	37
Product Type:	MOSFETs
Rise Time:	22.4 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	25.4 ns
Typical Turn-On Delay Time:	13.4 ns
Part # Aliases:	IRFB4620PBFXKMA1 SP005745529

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Datasheet

IRFB4620PBFXKMA1 Datasheet (PDF)

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TARIC:: 8541290000
ECCN:: EAR99

200V to 250V HEXFET® Power MOSFETs

Infineon 200V to 250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and R_DS(on) ratings. These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.