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SICW080N120H-BP

Name: Micro Commercial Components (MCC) SICW080N120H-BP
Brand: Micro Commercial Components (MCC)
SKU: 833-SICW080N120H-BP
Price: 75769 IDR
Availability: OutOfStock

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Mouser No:

833-SICW080N120H-BP

Mfr. No:

SICW080N120H-BP

Mfr.:

Micro Commercial Components (MCC)

Description:

SiC MOSFETs SiC MOSFET,TO-247AB

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SICW080N120H-BP Datasheet (PDF)

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Learn more about Micro Commercial Components (MCC) SICW080N120H-BP

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 52 Weeks Estimated factory production time.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1800 Multiples: 1800

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp75.769	Rp136.384.200

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Micro Commercial Components (MCC)
Product Category:	SiC MOSFETs
Mounting Style:	Through Hole
Package/Case:	TO-247AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	33 A
Rds On - Drain-Source Resistance:	134 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	131 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	224 W
Channel Mode:	Enhancement
Brand:	Micro Commercial Components (MCC)
Configuration:	Single
Fall Time:	26.4 ns
Forward Transconductance - Min:	6.5 S
Packaging:	Bulk
Product Type:	SiC MOSFETS
Rise Time:	64 ns
Factory Pack Quantity:	1800
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	60 ns
Typical Turn-On Delay Time:	28 ns

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Datasheet

SICW080N120H-BP Datasheet (PDF)

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

SICW0x 1200V SiC N-Channel MOSFETs

Micro Commercial Components (MCC) SICW0x 1200V SiC N-Channel MOSFETs amplify performance in versatile TO-247-4, TO-247-4L and TO-247AB packages. These MOSFETs feature high switching speed with low gate charge, design flexibility and reliability. The SICW0x 1200V SiC MOSFETs include a 21mΩ to 120mΩ typical wide on-resistance range and reliable performance. These SiC MOSFETs deliver superior thermal properties and a fast intrinsic diode to ensure smooth, efficient operation in challenging conditions. The SICW0x SiC MOSFETs are available in 3-pin and 4-pin (Kelvin source) configurations. Typical applications include motor drives, welding equipment, power supplies, renewable energy systems, charging infrastructure, cloud systems and Uninterruptible Power Supply (UPS).