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MSC50DC120HJ

Name: Microchip MSC50DC120HJ
Brand: Microchip Technology
SKU: 494-MSC50DC120HJ
Price: 1253399 IDR
Availability: OutOfStock

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Mouser No:

494-MSC50DC120HJ

Mfr. No:

MSC50DC120HJ

Mfr.:

Microchip Technology

Description:

Diode Modules PM-DIODE-SIC-SBD-SOT227

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Datasheet:

MSC50DC120HJ Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 18 Weeks Estimated factory production time.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp1.253.399	Rp1.253.399

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	Diode Modules
RoHS:
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Vr - Reverse Voltage:	1.2 kV
Configuration:	Full Bridge
Vf - Forward Voltage:	1.5 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Brand:	Microchip Technology
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	Not Available
Product:	SiC Schottky Diode Modules
Product Type:	Diode Modules
Factory Pack Quantity:	1
Subcategory:	Discrete and Power Modules
Technology:	SiC

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Datasheet

MSC50DC120HJ Datasheet (PDF)

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USHTS:: 8541590080
ECCN:: EAR99

Silicon Carbide (SiC) Power Modules

Microchip Technology Silicon Carbide (SiC) Power Modules combine a formidable array of technologies into a single package optimized for reliability, efficiency, space-saving, and reduced assembly time. The readily available standard module product line from Microchip Technology spans a wide selection of circuit topologies, semiconductors including Silicon Carbide, voltage and current ratings, and packages. Unique requirements can be met with application-specific power modules (ASPM®).

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm² to 15J/cm² and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.