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DDB6U50N16W1RPB11BPSA1

Name: Infineon DDB6U50N16W1RPB11BPSA1
Brand: Infineon Technologies
SKU: 726-DB6U50N16W1RPB11
Price: 623397 IDR
Availability: InStock

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Mouser No:

726-DB6U50N16W1RPB11

Mfr. No:

DDB6U50N16W1RPB11BPSA1

Mfr.:

Infineon Technologies

Description:

Diode Modules 1600 V, 50 A EasyBRIDGE Diode Module

Datasheet:

DDB6U50N16W1RPB11BPSA1 Datasheet (PDF)

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In Stock: 22

Stock:: 22 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 22 will be subject to minimum order requirements.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp623.397	Rp623.397
	Rp446.725	Rp4.467.250
	Rp446.358	Rp53.562.960

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Diode Modules
RoHS:
Mounting Style:	Screw Mount
Vr - Reverse Voltage:	1.6 kV
Vf - Forward Voltage:	1.61 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tray
Brand:	Infineon Technologies
Product:	Schottky Diode Modules - SBD
Product Type:	Diode Modules
Factory Pack Quantity:	30
Subcategory:	Discrete and Power Modules
Technology:	SiC
Part # Aliases:	DDB6U50N16W1RP_B11 SP005613027

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Datasheet

DDB6U50N16W1RPB11BPSA1 Datasheet (PDF)

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CAHTS:: 8541100090
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

1200V CoolSiC™ Modules

Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.