Toshiba MOSFET Modules

Results: 5
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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Packaging
Toshiba MOSFET Modules SiC MOSFET Module, 2200V, 250A
Datasheet
Non-Stocked Lead-Time 11 Weeks
Min.: 1
Mult.: 1

SiC Screw Mount N-Channel 1 Channel 2.2 kV 250 A - 10 V, 25 V 5.5 V + 150 C 2 kW Tray
Toshiba MOSFET Modules SiC MOSFET Module, 1700V, 250A
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

SiC Screw Mount N-Channel 1 Channel 1.7 kV 250 A - 10 V, 25 V 5.5 V + 150 C 1.35 kW Tray
Toshiba MOSFET Modules SiC MOSFET Module, 1200V, 400A
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

SiC Screw Mount N-Channel 1 Channel 1.2 kV 400 A - 10 V, 25 V 5.6 V + 150 C 1.35 kW Tray
Toshiba MOSFET Modules SiC MOSFET Module, 1700V, 400A
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

SiC Screw Mount N-Channel 1 Channel 1.7 kV 400 A - 10 V, 25 V 5.5 V + 150 C 2 kW Tray
Toshiba MOSFET Modules SiC MOSFET Module, 1200 V, 600 A
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

SiC Screw Mount N-Channel 1 Channel 1.2 kV 600 A - 10 V, 25 V 5.6 V + 150 C 2 kW Tray