Silicon Carbide (SiC) MOSFETs

Microchip Technology Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. These MOSFETs have low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs can stabilize operation at 175°C high junction temperature. These MOSFETs provide high efficiency with low switching losses. The SiC MOSFETs do not require any freewheeling diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply and distribution.

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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Packaging
Microchip Technology MOSFET Modules MOSFET SIC 1200 V 80 mOhm SOT-227
Datasheet
33In Stock
Min.: 1
Mult.: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 37 A 100 mOhms - 10 V, + 25 V - 55 C + 175 C 200 W Tube
Microchip Technology MOSFET Modules MOSFET SIC 1200 V 40 mOhm SOT-227
Datasheet
60In Stock
Min.: 1
Mult.: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 53 A 50 mOhms - 10 V, + 25 V - 55 C + 175 C 208 W Tube
Microchip Technology MOSFET Modules MOSFET SIC 1200 V 25 mOhm SOT-227
Datasheet
79In Stock
Min.: 1
Mult.: 1

SiC Screw Mount SOT-227-4 N-Channel 1.2 kV 84 A 31 mOhms - 10 V, + 25 V 5 V - 55 C + 175 C 321 W Tube