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STM32F217VGT7

Name: STMicroelectronics STM32F217VGT7
Brand: STMicroelectronics
SKU: 511-STM32F217VGT7
Price: 201072 IDR
Availability: OutOfStock

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Mouser No:

511-STM32F217VGT7

Mfr. No:

STM32F217VGT7

Mfr.:

STMicroelectronics

Description:

ARM Microcontrollers - MCU 16/32-BITS MICROS

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Datasheet:

STM32F217VGT7 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics STM32F217VGT7

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 15 Weeks Estimated factory production time.

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Minimum: 540 Multiples: 540

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp201.072	Rp108.578.880
	Rp197.953	Rp213.789.240

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	ARM Microcontrollers - MCU
RoHS:
Series:	STM32F2
ADC Resolution:	12 bit
Packaging:	Tray
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Moisture Sensitive:	Yes
Product Type:	ARM Microcontrollers - MCU
Factory Pack Quantity:	540
Subcategory:	Microcontrollers - MCU
Tradename:	STM32

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Datasheet

STM32F217VGT7 Datasheet (PDF)

CNHTS:: 8542319090
CAHTS:: 8542310000
USHTS:: 8542310025
TARIC:: 8542319000
MXHTS:: 8542310302
ECCN:: 5A992.C

STM32 F2 Microcontrollers

STMicroelectronics STM32 F2 Microcontrollers uses ST's advanced 90nm NVM process technology with the innovative adaptive real-time memory accelerator (ART Accelerator™) and multi-layer bus matrix. These Arm® Cortex™-M3 based microcontrollers offer an unprecedented trade-off in price and performance. The series is characterized by a high degree of integration combining up to 1Mbyte of Flash memory and up to 128Kbytes of SRAM with Ethernet MAC, USB 2.0 HS OTG, camera interface, hardware encryption support, and external memory interface. ST's acceleration technology enables these MCUs to achieve up to 150 DMIPS/398 CoreMark at 120MHz FCPU, which is equivalent to zero wait state execution, while keeping the dynamic current consumption at the outstandingly low level of 175µA/MHz.