STDRIVEG612QTR

STMicroelectronics
511-STDRIVEG612QTR
STDRIVEG612QTR

Mfr.:

Description:
Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches
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New Product:
New from this manufacturer.
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Availability

Stock:
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You can still purchase this product for backorder.

On Order:
1.000
Expected 25/02/2026
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp88.795 Rp88.795
Rp59.258 Rp592.580
Rp55.221 Rp1.380.525
Rp48.433 Rp4.843.300
Rp45.865 Rp11.466.250
Rp41.279 Rp20.639.500
Rp37.609 Rp37.609.000
Full Reel (Order in multiples of 3000)
Rp31.739 Rp95.217.000

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
Gate Driver
Half-Bridge
SMD/SMT
QFN-18
2 Driver
3 Output
1.8 A
10.3 V
18 V
Inverting, Non-Inverting
22 ns
13 ns
- 40 C
+ 125 C
Reel
Cut Tape
Brand: STMicroelectronics
Maximum Turn-Off Delay Time: 65 ns
Maximum Turn-On Delay Time: 65 ns
Output Voltage: 520 V
Product Type: Gate Drivers
Propagation Delay - Max: 65 ns
Rds On - Drain-Source Resistance: 6.8 Ohms
Shutdown: Shutdown
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: GaN
Tradename: STDRIVE
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Attributes selected: 0

Datasheet

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STDRIVEG612 600V Half-Bridge Gate Driver

STMicroelectronics STDRIVEG612 600V High-Speed Half-Bridge Gate Driver is optimized for 5V driving enhanced-mode GaN HEMTs. The high-side driver section is designed to support a voltage rail of up to 600V and can be easily supplied by the integrated bootstrap diode. High-current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG612 optimized for driving high-speed GaN.

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