UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D2PAK-3, D2PAK-7, D2PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

Results: 23
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename
onsemi SiC MOSFETs 650V/40MOSICFETG3TO247-4 3.278In Stock
Rp363.250,80
Rp217.400,10
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1700V/400MOSICFETG3TO263-7 26In Stock
2.400On Order
Cut Tape
Rp213.547,44
Rp150.987,58
Rp112.094,06
Rp106.039,88
Reel
Rp106.039,88
Min.: 1
Mult.: 1
Max.: 800
: 800
SMD/SMT D2PAK-7 1 Channel 1.7 kV 7.6 A 410 mOhms - 25 V, + 25 V 6 V 23.1 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi SiC MOSFETs 650V/80MOSICFETG3TO247-4 583In Stock
Rp236.663,40
Rp132.825,04
Rp123.285,12
Rp118.515,16
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/80MOSICFETG3TO24 1.142In Stock
Rp388.201,36
Rp236.846,86
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/80MOSICFETG3TO26 618In Stock
Cut Tape
Rp352.793,58
Rp221.252,76
Rp214.831,66
Reel
Rp206.575,96
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 28.8 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 190 W Enhancement SiC FET
onsemi SiC MOSFETs 650V/80MOSICFETG3TO220 475In Stock
Rp219.968,54
Rp126.770,86
Rp117.230,94
Rp109.158,70
Min.: 1
Mult.: 1
Through Hole TO-220-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/80MOSICFETG3TO247 626In Stock
Rp225.839,26
Rp129.339,30
Rp119.982,84
Rp114.845,96
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 12 V, + 12 V 6 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/40MOSICFETG3TO247-3 202In Stock
Rp539.005,48
Rp402.327,78
Rp400.860,10
Rp359.398,14
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/150MOSICFETG3TO2 343In Stock
Cut Tape
Rp234.278,42
Rp134.476,18
Rp123.835,50
Rp117.230,94
Reel
Rp117.230,94
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 17 A 150 mOhms - 25 V, + 25 V 4.4 V 25.7 nC - 55 C + 175 C 136 W Enhancement SiC FET
onsemi SiC MOSFETs 650V/30MOSICFETG3TO220-3 892In Stock
Rp470.758,36
Rp302.709,00
Min.: 1
Mult.: 1
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 5 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/40MOSICFETG3TO247 1.166In Stock
Rp357.930,46
Rp213.363,98
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 54 A 42 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/40MOSICFETG3TO24 610In Stock
Rp541.390,46
Rp359.398,14
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/80MOSICFETG3TO263-3 1.252In Stock
Cut Tape
Rp216.115,88
Rp124.569,34
Rp113.194,82
Rp107.140,64
Reel
Rp107.140,64
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-3 (TO-263-3) 1 Channel 650 V 25 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 115 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/80MOSICFETG3TO263-7 199In Stock
Cut Tape
Rp247.304,08
Rp143.649,18
Rp133.925,80
Rp126.770,86
Reel
Rp126.770,86
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 650 V 27 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 136.4 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/400MOSICFETG3TO263-7 718In Stock
800Expected 08/01/2027
Cut Tape
Rp169.700,50
Rp93.014,22
Rp85.492,36
Rp80.722,40
Reel
Rp80.722,40
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 5.9 A 410 mOhms - 25 V, + 25 V 6 V 22.5 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/80MOSICFETG3TO247-4 641In Stock
Rp388.568,28
Rp237.030,32
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1700V/400MOSICFETG3TO2 266In Stock
600Expected 18/12/2026
Rp217.216,64
Rp122.551,28
Rp113.194,82
Rp107.507,56
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-3 1 Channel 1.7 kV 7.6 A 1.07 Ohms - 25 V, + 25 V 6 V 27.5 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/150MOSICFETG3TO247-4 63In Stock
Rp256.110,16
Rp143.098,80
Rp138.512,30
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 18.4 A 330 mOhms - 25 V, + 25 V 3.5 V 25.7 nC - 55 C + 175 C 166.7 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/30MOSICFETG3TO247 62In Stock
Rp495.525,46
Rp304.543,60
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/30MOSICFETG3TO247-4
1.200Expected 04/11/2026
Rp496.809,68
Rp397.741,28
Rp343.987,50
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/40MOSICFETG3TO220-3
1.000Expected 10/11/2026
Rp374.258,40
Rp224.188,12
Rp213.914,36
Min.: 1
Mult.: 1
Through Hole TO-220-3 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/400MOSICFETG3TO247-3
300Expected 15/01/2027
Rp212.997,06
Rp145.300,32
Rp121.083,60
Rp107.874,48
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 7.6 A 1.07 Ohms - 25 V, + 25 V 6 V 27.5 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/30MOSICFETG3TO263-3 Non-Stocked Lead-Time 52 Weeks
Cut Tape
Rp463.603,42
Rp313.533,14
Reel
Rp313.533,14
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-3 (TO-263-3) 1 Channel 650 V 65 A 27 mOhms - 25 V, + 25 V 4 V 51 nC - 25 C + 175 C 242 W Enhancement AEC-Q101 SiC FET