π-MOS VIII MOSFETs

Toshiba π-MOS VIII MOSFETs are 10V gate drive single N-channel devices based on the Toshiba eighth-generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. The technology supports reduced gate charge and capacitance compared to prior generations without losing the benefits of low RDS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through-hole form factor and a surface-mounted DPAK package.

Results: 11
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Toshiba MOSFETs TO252 900V 2A N-CH MOSFET 4.015In Stock
Cut Tape
Rp33.022,80
Rp17.281,93
Rp13.392,58
Rp10.530,60
Reel
Rp9.778,42
Min.: 1
Mult.: 1
: 2.000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 900 V 2 A 5.9 Ohms 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFETs PLN MOS 900V 1300m (VGS=10V) TO-220SIS 5In Stock
550On Order
Rp58.890,66
Rp28.803,22
Rp25.684,40
Rp21.831,74
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 9 A 1 Ohms 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube
Toshiba MOSFETs X33 Pb-F POWER MOSFET TRANSISTOR DPAK(OS) MOQ=2000 PD=80W F=1MHZ 3.085In Stock
Cut Tape
Rp28.069,38
Rp13.209,12
Rp11.759,79
Rp9.209,69
Reel
Rp8.824,43
Min.: 1
Mult.: 1
: 2.000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 3 A 4.9 Ohms 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFETs PLN MOS 900V 1300m (VGS=10V) TO-3PN 2.396In Stock
Rp71.916,32
Rp40.911,58
Rp32.472,42
Rp29.720,52
Rp21.831,74
Min.: 1
Mult.: 1
Si Through Hole TO-3P N-Channel 1 Channel 900 V 9 A 1.3 Ohms 30 V 2.5 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFETs PLN MOS 800V 1000m (VGS=10V) TO-220SIS 153In Stock
Rp52.102,64
Rp25.684,40
Rp25.500,94
Rp23.849,80
Min.: 1
Mult.: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 10 A 700 mOhms 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube
Toshiba MOSFETs PLN MOS 800V 1000m (VGS=10V) TO-3PN 4In Stock
125Expected 23/11/2026
Rp70.448,64
Rp35.958,16
Rp31.922,04
Rp26.234,78
Min.: 1
Mult.: 1
Si Through Hole TO-3PN-3 N-Channel 1 Channel 800 V 10 A 700 mOhms 30 V 4 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFETs X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ 250In Stock
Rp29.537,06
Rp13.942,96
Rp13.924,61
Rp10.897,52
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 2.5 A 4.6 Ohms 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube
Toshiba MOSFETs X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ 265In Stock
Rp30.087,44
Rp14.181,46
Rp14.163,11
Rp10.897,52
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 3.5 Ohms 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube
Toshiba MOSFETs PLN MOS 800V 1700m (VGS=10V) TO-220SIS 158In Stock
Rp43.296,56
Rp21.097,90
Rp20.914,44
Rp18.346,00
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 1.35 Ohms 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFETs PLN MOS 900V 2000m (VGS=10V) TO-220SIS 170In Stock
Rp40.361,20
Rp19.630,22
Rp19.446,76
Rp16.786,59
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFETs PLN MOS 900V 2000m (VGS=10V) TO-3PN 98In Stock
Rp61.275,64
Rp30.637,82
Rp27.152,08
Rp22.198,66
Min.: 1
Mult.: 1
Si Through Hole TO-3PN-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms 30 V 4 V 32 nC - 55 C + 150 C 200 W Enhancement MOSVIII Tray