M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.

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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package/Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
STMicroelectronics IGBTs Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT
Datasheet
912In Stock
Rp163.279,40
Rp89.345,02
Rp77.603,58
Min.: 1
Mult.: 1
Si Max247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 100 A 535 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
Datasheet
274In Stock
1.000Expected 07/09/2027
Rp118.698,62
Rp77.787,04
Rp57.239,52
Rp50.818,42
Rp45.131,16
Min.: 1
Mult.: 1
Si TO-220-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
Datasheet
349In Stock
Rp133.008,50
Rp76.319,36
Rp63.844,08
Rp59.257,58
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
Datasheet
457In Stock
Rp104.572,20
Rp63.844,08
Rp49.901,12
Rp39.627,36
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 30 A 283 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Datasheet
1.393Expected 04/12/2026
Rp118.515,16
Rp77.603,58
Rp57.056,06
Rp50.818,42
Rp45.131,16
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
Datasheet
600Expected 20/08/2027
Rp114.662,50
Rp65.128,30
Rp61.092,18
Rp48.433,44
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Datasheet
592Expected 20/08/2027
Rp90.629,24
Rp59.807,96
Rp42.379,26
Rp34.123,56
Rp32.655,88
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Datasheet
Non-Stocked Lead-Time 22 Weeks
Rp129.889,68
Rp86.960,04
Rp69.898,26
Rp62.009,48
Rp55.038,00
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 326 W - 55 C + 175 C M Tube