Incoterms:FCA (Shipping Point) Duty, customs fees and taxes are collected at time of delivery.
Please confirm your currency selection:
Indonesian Rupiah Payment accepted in Credit cards only
US Dollars All payment options available
Images are for reference only See Product Specifications
Share This
The link could not be generated at this time. Please try again.
DMTH6005 N-Channel Enhancement Mode MOSFETs
Diodes Inc. DMTH6005 N-channel Enhance Mode MOSFETs minimize the on-state resistance (RDS(ON)) and maintain superior switching performance. The DMTH6005 MOSFETs offer a maximum of 5.5mΩ @ VGS = 10V RDS(ON), a drain-source breakdown voltage of 60V, and 100% unclamped inductive switching. Rated at 175ºC, these MOSFETs are ideal for high ambient temperature environments. DMTH6005LPSQ is automotive qualified to AEC-Q101 and supports PPAP. Applications for the DMTH6005 MOSFETs include high-frequency switching, synchronous rectification, and DC-DC converters.