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SCTW70N120G2V 1200V 91A SiC Power MOSFETs

STMicroelectronics SCTW70N120G2V 1200V 91A SiC (Silicon Carbide) Power MOSFET features minimal ON-resistance and excellent switching performance, almost independent of temperature, due to the advanced, innovative properties of wide bandgap materials. The SCTW70N120G2V also offers a high-speed, robust intrinsic body diode and extremely low gate charge and input capacities. A high-temperature rating of +200°C enables the improved thermal design of power electronics systems.

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Select	Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (IDR) Filter the results in the table by unit price based on your quantity.	Qty.	RoHS	ECAD Model	Mounting Style	Package/Case	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification
	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package SCT020W120G3-4AG STMicroelectronics 1: Rp367.286,92 181In Stock 600On Order	Mfr. Part No. SCT020W120G3-4AG Mouser Part No 511-SCT020W120G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	181In Stock 600On Order	Rp367.286,92 Rp217.583,56	Min.: 1 Mult.: 1			Through Hole	Hip247-4	1 Channel	1.2 kV	100 A	28 mOhms	- 10 V, + 22 V	3 V	121 nC	- 55 C	+ 200 C	541 W	Enhancement	AEC-Q101
	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package SCT070W120G3-4AG STMicroelectronics 1: Rp253.174,80 20In Stock 1.200On Order	Mfr. Part No. SCT070W120G3-4AG Mouser Part No 511-SCT070W120G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package Learn More about STMicroelectronics stm sctw70n120g2v 1200v sic power mosfet	Datasheet	20In Stock 1.200On Order	Rp253.174,80 Rp169.150,12 Rp159.059,82 Rp142.731,88 Rp134.109,26	Min.: 1 Mult.: 1			Through Hole	HiP-247-4	1 Channel	1.2 kV	30 A	87 mOhms	- 18 V, + 18 V	4.2 V	41 nC	- 55 C	+ 200 C	236 W	Enhancement	AEC-Q101
	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package SCT070HU120G3AG STMicroelectronics 1: Rp269.135,82 599Expected 14/12/2026	Mfr. Part No. SCT070HU120G3AG Mouser Part No 511-SCT070HU120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package Learn More about STMicroelectronics stm sctw70n120g2v 1200v sic power mosfet	Datasheet	599Expected 14/12/2026	Cut Tape Rp269.135,82 Rp184.744,22 Rp162.729,02 Reel Rp146.768,00	Min.: 1 Mult.: 1 : 600			SMD/SMT	HU3PAK-7	1 Channel	1.2 kV	30 A	87 mOhms	- 18 V, + 18 V	4.2 V	37 nC	- 55 C	+ 175 C	223 W	Enhancement	AEC-Q101
	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package SCT070H120G3AG STMicroelectronics 1: Rp237.213,78 Non-Stocked Lead-Time 25 Weeks	Mfr. Part No. SCT070H120G3AG Mouser Part No 511-SCT070H120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package Learn More about STMicroelectronics stm sctw70n120g2v 1200v sic power mosfet	Datasheet	Non-Stocked Lead-Time 25 Weeks	Cut Tape Rp237.213,78 Rp176.855,44 Rp147.318,38 Rp131.357,36 Reel Rp122.734,74	Min.: 1 Mult.: 1 : 1.000			SMD/SMT	H2PAK-7	1 Channel	1.2 kV	30 A	87 mOhms	- 18 V, + 18 V	4.2 V	37 nC	- 55 C	+ 175 C	223 W	Enhancement	AEC-Q101
	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package SCT070W120G3-4 STMicroelectronics 1: Rp231.526,52 Non-Stocked Lead-Time 36 Weeks	Mfr. Part No. SCT070W120G3-4 Mouser Part No 511-SCT070W120G3-4	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package Learn More about STMicroelectronics stm sctw70n120g2v 1200v sic power mosfet	Datasheet	Non-Stocked Lead-Time 36 Weeks	Rp231.526,52 Rp172.452,40 Rp143.649,18 Rp128.055,08	Min.: 1 Mult.: 1			Through Hole	HiP247-4		1.2 kV	30 A	87 mOhms	- 10 V, + 22 V	3 V	41 nC	- 55 C	+ 200 C	236 W	Enhancement