CoolMOS® Power Transistors

Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Results: 4
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 Mfr.
Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Infineon Technologies MOSFETs HIGH POWER_LEGACY
Datasheet
Non-Stocked Lead-Time 8 Weeks
Rp87.143,50
Rp44.947,70
Rp40.728,12
Rp33.389,72
Rp32.839,34
Min.: 1
Mult.: 1
Si Through Hole TO-220FP-3 1 Channel 650 V 22.4 A 351 mOhms 20 V 4 V 8 nC - 55 C + 150 C 34.7 W Tube
Infineon Technologies MOSFETs HIGH POWER_LEGACY
Datasheet
Non-Stocked Lead-Time 8 Weeks
Cut Tape
Rp130.806,98
Rp69.531,34
Rp63.660,62
Rp55.955,30
Reel
Rp52.836,48
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 31.2 A 257 mOhms 20 V 4 V 118 nC - 55 C + 150 C 277.8 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_LEGACY
Datasheet
Non-Stocked Lead-Time 23 Weeks
Rp76.319,36
Rp39.994,28
Rp36.141,62
Rp29.353,60
View
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17.5 A 190 mOhms 20 V 3.5 V 68 nC - 55 C + 150 C 151 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_LEGACY
Datasheet
Non-Stocked Lead-Time 41 Weeks
Rp173.002,78
Rp105.306,04
Rp88.794,64
Rp82.740,46
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 43.3 A 80 mOhms 20 V 4 V 167 nC - 55 C + 150 C 391 W Enhancement Tube