NVH4L020N090SC1

onsemi
863-NVH4L020N090SC1
NVH4L020N090SC1

Mfr.:

Description:
SiC MOSFETs SIC MOSFET 900V TO247-4L 20MOHM

Datasheet:
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Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
TO-247-4
EliteSiC
Brand: onsemi
Packaging: Tube
Product Type: SiC MOSFETS
Series: NVH4L020N090SC1
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
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Attributes selected: 0

Datasheet

PCN

Compliance Codes
CNHTS:
8541290000
USHTS:
8541290095
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Korea, Republic of
The country is subject to change at the time of shipment.

900V EliteSiC (Silicon Carbide) MOSFETs

onsemi 900V EliteSiC (Silicon Carbide) MOSFETs use a technology that provides superior switching performance and higher reliability than silicon. Also, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low RDS(on), and high short circuit withstand time (SCWT).

In Stock: 450

Stock:
450 Can Dispatch Immediately
Factory Lead Time:
45 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 450 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp637.890 Rp637.890
Rp515.339 Rp5.153.390
Rp494.792 Rp59.375.040

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