BSH205G2 20V P-Channel Trench MOSFET

Nexperia BSH205G2 20V P-Channel Trench MOSFET is an enhancement mode field-effect transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The device employs Trench MOSFET technology and offers a low threshold voltage with very fast switching. The BSH205G2 MOSFET is ideal for applications like relay drivers, high-speed line drivers and switching circuits.

Results: 3
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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
Nexperia MOSFETs BSH205G2A/SOT23/TO-236AB
Datasheet
158.728In Stock
Cut Tape
Rp7.521,86
Rp3.375,66
Rp2.935,36
Rp2.183,17
Reel
Rp1.614,45
View
MouseReel Available
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT SOT-23-3 P-Channel 1 Channel 20 V 2.6 A 118 mOhms 8 V 900 mV 4.6 nC - 55 C + 175 C 1.3 W Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFETs BSH205G2/SOT23/TO-236AB
Datasheet
34.579Expected 26/03/2027
Cut Tape
Rp10.640,68
Rp7.283,36
Rp4.604,85
Rp3.210,55
Rp2.917,01
Reel
Rp2.238,21
MouseReel Available
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT SOT-23-3 P-Channel 1 Channel 20 V 2.3 A 170 mOhms 8 V 450 mV 6.5 nC - 55 C + 150 C 890 mW Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFETs BSH205G2/SOT23/TO-236AB
Datasheet
19.899Expected 26/03/2027
Cut Tape
Rp10.640,68
Rp7.283,36
Rp4.604,85
Rp2.898,67
View
Reel
Rp1.687,83
MouseReel Available
Min.: 1
Mult.: 1
: 10.000
Si SMD/SMT SOT-23-3 P-Channel 1 Channel 20 V 2.3 A 170 mOhms 8 V 950 mV 6.5 nC - 55 C + 150 C 890 mW Enhancement Reel, Cut Tape, MouseReel