950V CoolMOS™ PFD7 SJ MOSFETs

Infineon Technologies 950V CoolMOS™ PFD7 SJ MOSFETs offer super junction (SJ) technologies. The SJ technology is ideal for lighting and industrial SMPS applications by incorporating best-in-class performance with state-of-the-art ease of use. The PFDJ provides an integrated ultra-fast body diode allowing usage in resonant topologies with the lowest reverse recovery charge (Qrr).

Results: 10
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Packaging
Infineon Technologies MOSFETs HIGH POWER_NEW 1.311In Stock
2.000Expected 22/10/2026
Cut Tape
Rp138.329
Rp74.301
Rp68.064
Rp65.128
Reel
Rp61.459
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT TO-263-3 N-Channel 1 Channel 950 V 36.5 A 130 mOhms 20 V 2.5 V 141 nC - 55 C + 150 C 227 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW 182In Stock
480Expected 19/10/2026
Rp130.073
Rp73.567
Rp67.697
Rp62.560
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 36.5 A 130 mOhms 20 V 2.5 V 141 nC - 55 C + 150 C 227 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 894In Stock
Rp276.474
Rp155.574
Rp152.822
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 74.7 A 60 mOhms 30 V 3.5 V 315 nC - 55 C + 150 C 446 W Enhancement Tube
Infineon Technologies MOSFETs LOW POWER_NEW 1.894In Stock
Cut Tape
Rp75.952
Rp38.710
Rp35.041
Rp29.170
Reel
Rp27.519
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 950 V 17.5 A 310 mOhms 30 V 3.5 V 61 nC - 55 C + 150 C 125 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs LOW POWER_NEW 1.654In Stock
Cut Tape
Rp67.697
Rp34.124
Rp30.821
Rp25.134
Reel
Rp23.483
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 950 V 13.3 A 450 mOhms 30 V 3.5 V 43 nC - 55 C + 150 C 104 W Enhancement Reel, Cut Tape


Infineon Technologies MOSFETs LOW POWER_NEW 3.705In Stock
Rp76.503
Rp37.976
Rp34.490
Rp28.620
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 17.5 A 310 mOhms 30 V 3.5 V 61 nC - 55 C + 150 C 125 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 329In Stock
Rp138.145
Rp74.118
Rp67.880
Rp61.459
Min.: 1
Mult.: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 950 V 13.9 A 130 mOhms 30 V 3.5 V 141 nC - 55 C + 150 C 33 W Enhancement Tube
Infineon Technologies MOSFETs LOW POWER_NEW 679In Stock
Cut Tape
Rp60.175
Rp30.087
Rp27.152
Rp22.015
Rp21.648
Reel
Rp19.997
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 950 V 13.3 A 450 mOhms 30 V 3.5 V 43 nC - 55 C + 150 C 104 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs LOW POWER_NEW 393In Stock
Rp75.952
Rp38.710
Rp35.041
Rp28.436
Rp28.069
Min.: 1
Mult.: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 950 V 8.7 A 310 mOhms 30 V 3.5 V 61 nC - 55 C + 155 C 31 W Enhancement Tube
Infineon Technologies MOSFETs LOW POWER_NEW 712In Stock
Rp64.394
Rp32.289
Rp29.170
Rp24.951
Min.: 1
Mult.: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 950 V 7.2 A 450 mOhms 30 V 3.5 V 43 nC - 55 C + 150 C 30 W Enhancement Tube