DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Toshiba MOSFETs N-Ch 30.8A 230W FET 600V 3000pF 86nC
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 30.8 A 88 mOhms - 30 V, 30 V 105 nC 230 W DTMOSIV Tube
Toshiba MOSFETs N-Ch DTMOSIV 600 V 240W 3000pF 30.8A
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 30.8 A 78 mOhms - 30 V, 30 V 3.7 V 86 nC - 55 C + 150 C 240 W Enhancement DTMOSIV Reel
Toshiba MOSFETs N-Ch 38.8A 270W FET 600V 4100pF 110nC
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 38.8 A 65 mOhms - 30 V, 30 V 2.7 V 110 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 5.8 A 850 mOhms - 30 V, 30 V 2.5 V 11 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 650 V 5.8 A 890 mOhms - 30 V, 30 V 2.5 V 11 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Tube
Toshiba MOSFETs DTMOSIV 600V 600mOhm DPKw/Hgh Speed Diode
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7 A 540 mOhms - 30 V, 30 V 4.5 V 16 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel
Toshiba MOSFETs N-Ch 8A 30W FET 600V 570pF 18.5nC
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 8 A 420 mOhms - 30 V, 30 V 3.7 V 18.5 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 7.8 A 530 mOhms - 30 V, 30 V 2.5 V 16 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 8 A 420 mOhms - 30 V, 30 V 3.7 V 18.5 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel
Toshiba MOSFETs DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 8 A 420 mOhms - 30 V, 30 V 3.7 V 18.5 nC - 55 C + 150 C 80 W DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 650 V 7.8 A 550 mOhms - 30 V, 30 V 2.5 V 16 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 9.3 A 430 mOhms - 30 V, 30 V 2.5 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 9.3 A 460 mOhms - 30 V, 30 V 2.5 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel