600V MDmesh™ DM6 Super-junction MOSFETs

STMicroelectronics 600V MDmesh™ DM6 Super-junction MOSFETs are optimized for ZVS, full-bridge, and half-bridge topologies. With a breakdown voltage of 600V, the MDmesh DM6 Power MOSFETs combine an optimized capacitance profile and lifetime killing process. The STMicroelectronics 600V MDmesh DM6 Super-junction MOSFETs offer a low gate charge (Qg), very low recovery charge (Qrr), low recovery time (trr), and an excellent RDS(on) per area.

Results: 9
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
STMicroelectronics MOSFETs N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET 475In Stock
Rp154.106,40
Rp83.657,76
Rp76.869,74
Rp70.999,02
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 71 mOhms 25 V 3.25 V 54 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET in a TO-247 long lea 585In Stock
Rp146.951,46
Rp91.913,46
Rp79.071,26
Rp66.595,98
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 71 mOhms 25 V 3.25 V 54 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 package 270In Stock
Rp186.395,36
Rp127.688,16
Rp105.306,04
Rp102.554,14
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 72 A 36 mOhms 25 V 3.25 V 117 nC - 55 C + 150 C 446 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 0.094 Ohm typ., 25 A MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 2.632In Stock
Cut Tape
Rp149.703,36
Rp93.014,22
Rp79.438,18
Rp71.549,40
Rp65.311,76
Reel
Rp64.027,54
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT PowerFLAT-8x8-5 N-Channel 1 Channel 600 V 25 A 110 mOhms 25 V 3.25 V 44 nC - 55 C + 150 C 160 W Enhancement MDmesh Reel, Cut Tape

STMicroelectronics MOSFETs N-channel 600 V, 165 mOhm typ., 18 A MDmesh DM6 Power MOSFET in a TO-220 package 1.186In Stock
Rp89.345,02
Rp46.048,46
Rp35.958,16
Rp34.123,56
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 195 mOhms 25 V 3.25 V 24 nC - 55 C + 150 C 130 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 165 mOhm typ., 18 A MDmesh DM6 Power MOSFET in TO-220FP package Non-Stocked Lead-Time 36 Weeks
Rp32.472,42
Min.: 1.000
Mult.: 1.000
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 195 mOhms 25 V 3.25 V 24 nC - 55 C + 150 C 30 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO247-4 package Non-Stocked Lead-Time 36 Weeks
Rp111.176,76
Min.: 600
Mult.: 600
Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 72 A 36 mOhms 25 V 3.25 V 106 nC - 55 C + 150 C 446 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 35 mOhm typ., 63 A MDmesh M6 Power MOSFET in a TO-247 long lead Non-Stocked Lead-Time 36 Weeks
Rp248.404,84
Rp181.441,94
Rp151.171,04
Rp134.659,64
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 63 A 41 mOhms 25 V 3.25 V 106 nC - 55 C + 150 C 390 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 package Non-Stocked Lead-Time 36 Weeks
Rp88.611,18
Min.: 600
Mult.: 600
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 62 A 42 mOhms 25 V 3.25 V 99 nC - 55 C + 150 C 390 W Enhancement MDmesh Tube