R60/R65 N-Ch Power MOSFETs

ROHM Semiconductor R60/R65 N-Ch Power MOSFETs provide a single channel output with 600V or 650V drain-source voltage in a TO-220FM-3 package. The R60/R65 MOSFETs have an operating temperature from -55°C to +150°C and power dissipation options of 40W, 46W, 48W, 53W, 68W, 74W, or 86W. The R60/R65 N-Ch Power MOSFETs are ideal for switching applications.

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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
ROHM Semiconductor MOSFETs Nch 600V 14A, TO-220FM, Power MOSFET: R6027YNX is a power MOSFET with low on - resistance, suitable for switching.
Datasheet
1.988In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 600 V 81 A 135 mOhms - 30 V, 30 V 6 V 40 nC - 55 C + 150 C 70 W Enhancement Tube
ROHM Semiconductor MOSFETs Nch 600V 33A, TO-3PF, Power MOSFET: R6086YNZ is a power MOSFET with low on - resistance, suitable for switching.
Datasheet
600In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 600 V 33 A 44 mOhms - 30 V, 30 V 6 V 110 nC + 150 C 114 W Enhancement Tube
ROHM Semiconductor MOSFETs TO252 600V 7A N-CH MOSFET
Datasheet
5.000In Stock
Min.: 1
Mult.: 1
: 2.500

Si SMD/SMT TO-252-3 N-Channel 1 Channel 600 V 7 A 620 mOhms - 20 V, 20 V 5 V 14.5 nC - 55 C + 150 C 78 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFETs TO252 600V 9A N-CH MOSFET
Datasheet
4.949In Stock
Min.: 1
Mult.: 1
: 2.500

Si SMD/SMT TO-252-3 N-Channel 1 Channel 600 V 9 A 535 mOhms - 20 V, 20 V 5 V 16.5 nC - 55 C + 150 C 94 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFETs TO247 650V 60A N-CH MOSFET
Datasheet
600Expected 02/09/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 60 A 185 mOhms - 20 V, 20 V 6 V 28 nC - 55 C + 150 C 182 W Enhancement Tube
ROHM Semiconductor MOSFETs TO220 650V 11A N-CH MOSFET
Datasheet
Non-Stocked Lead-Time 30 Weeks
Min.: 1.000
Mult.: 1.000

Si Through Hole TO-220FM-3 N-Channel 1 Channel 650 V 11 A 400 mOhms - 20 V, 20 V 4 V 32 nC - 55 C + 150 C 53 W Enhancement Tube