CG2H40xx & CG2H30xx GaN HEMTs

MACOM CG2H40xx and CG2H30xx Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to operate from a 28V rail. These transistors offer a general-purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities make these HEMTs ideal for linear and compressed amplifier circuits. MACOM CG2H40xx and CG2H30xx transistors offer design flexibility with a wide variety of package types, including screw-down, solder-down, pill, and flange. Typical applications include broadband amplifiers, cellular infrastructure, and radar.

Results: 5
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs th - Gate-Source Threshold Voltage Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Maximum Operating Frequency Minimum Operating Frequency Technology
MACOM GaN FETs GaN HEMT DC-4.0GHz, 45 Watt 778In Stock
Rp8.165.988
Rp7.630.468
Rp6.870.577
Min.: 1
Mult.: 1
Screw Mount 440193 N-Channel 120 V 6 A - 3.8 V - 40 C + 150 C 4 GHz 0 Hz GaN
MACOM GaN FETs 70W, DC-4.0GHz, 28V, RF Power GaN HEMT
Screw Mount 440224 N-Channel 120 V 12 A - 3.8 V - 40 C + 150 C 4 GHz 0 Hz GaN
MACOM GaN FETs GaN HEMT DC-8.0GHz, 10 Watt 1.126In Stock
160On Order
Rp2.064.659
Rp1.733.697
Rp1.651.140
Min.: 1
Mult.: 1
Screw Mount 440166 N-Channel 120 V 1.5 A - 2.7 V - 40 C + 150 C 6 GHz 0 Hz GaN
MACOM GaN FETs GaN HEMT 266In Stock
Rp9.424.340
Rp8.207.083
Min.: 1
Mult.: 1
Screw Mount 440223 N-Channel 125 V 18 A - 3.8 V - 40 C + 150 C 150 W 1 GHz 50 MHz GaN
MACOM GaN FETs GaN HEMT DC-6.0GHz, 25 Watt 6In Stock
1.600On Order
Rp4.492.568
Rp3.926.961
Rp3.698.737
Min.: 1
Mult.: 1
Screw Mount 440166 N-Channel 120 V 3 A - 3.8 V - 40 C + 150 C 6 GHz 0 Hz GaN