650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors feature advanced technology, meeting the demand for efficient energy applications. The Infineon Technologies 650V transistors feature a cutting-edge micro-pattern trench design for precise control and high performance. The design results in significant loss reduction, improved efficiency, and enhanced power density across various industries like string inverters, energy storage systems (ESS), EV charging, industrial UPS, and welding.

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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package/Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Infineon Technologies IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247-3 HCC package
Datasheet
210Expected 11/02/2027
Rp113.562
Rp74.301
Rp62.193
Rp57.240
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 341 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 100 A IGBT with anti-parallel diode in TO247-4 package
Datasheet
240Expected 29/10/2026
Rp159.977
Rp93.198
Rp78.521
Rp74.668
Min.: 1
Mult.: 1
Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 140 A 429 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO247-4 package
Datasheet
240Expected 04/02/2027
Rp138.329
Rp87.510
Rp75.035
Rp63.294
Min.: 1
Mult.: 1
Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 338 W - 40 C + 175 C IGBT7 H7 Tube