GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.

Results: 32
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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Operating Frequency
Minimum Operating Frequency
Technology
MACOM GaN FETs GaN HEMT Die DC-18GHz, 6 Watt
Datasheet
200Expected 25/11/2026
Rp1.152.128,80
Min.: 200
Mult.: 10
SMD/SMT Die N-Channel 100 V 800 mA 2.3 Ohms - 3 V 18 GHz 10 MHz GaN
MACOM GaN FETs GaN HEMT DC-2.5GHz, 90 Watt
Datasheet
Non-Stocked Lead-Time 26 Weeks
Rp10.297.426,34
Rp9.093.745,28
Min.: 1
Mult.: 1
Screw Mount 440199 N-Channel 2 Channel 120 V 12 A - 3 V - 40 C + 150 C 2.5 GHz 500 MHz GaN
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 15 Watt
Datasheet
Non-Stocked Lead-Time 26 Weeks
Rp1.668.568,70
Min.: 100
Mult.: 10
SMD/SMT Die N-Channel 120 V 1.5 A 1 Ohms - 3 V 6 GHz 4 GHz GaN
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 120 Watt
Mouser does not sell this product in your region.
Datasheet
SMD/SMT Die N-Channel 8 Channel 120 V 12 A 100 mOhms - 3 V 6 GHz 4 GHz GaN
MACOM GaN FETs GaN HEMT 1.2-1.4GHz, 250 Watt
Datasheet
Non-Stocked Lead-Time 26 Weeks
Rp11.260.958,26
Min.: 25
Mult.: 25
Screw Mount 440162 N-Channel 150 V 18 A - 3 V - 40 C + 130 C 1.4 GHz 1.2 GHz GaN
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 40 Watt
Datasheet
Non-Stocked Lead-Time 26 Weeks
Rp2.655.216,58
Min.: 50
Mult.: 10
SMD/SMT Die N-Channel 2 Channel 50 V 3.2 A 6 GHz 0 Hz GaN
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 170 Watt
Mouser does not sell this product in your region.
Datasheet
SMD/SMT Die N-Channel 8 Channel 50 V 12.6 A 6 GHz 0 Hz GaN