MXP120 MaxSiC™ 1200V N-Channel MOSFETs

Vishay Semiconductors MXP120 MaxSiC™ 1200V N-Channel MOSFETs feature 1200V drain-source voltage, fast switching speed, and 3μs short circuit withstand time. These MOSFETs also feature maximum power dissipation of 56W to 288W (Tc = 25°C) and continuous drain current of 10.5A to 53A (Tc = 25°C). The MXP120 MaxSiC™ 1200V N-Channel MOSFETs are halogen-free and are available in TO-247AD 3L, TO-247AD 4L, and TO-263 7L packages. These MOSFETs are used in chargers, auxiliary motor drives, and DC-DC converters.

Results: 17
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET 800In Stock
Rp224.372
Rp162.362
Rp135.210
Rp124.202
Min.: 1
Mult.: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 52 A 56 mOhms - 10 V, 22 V 2.8 V 82 nC - 55 C + 175 C 268 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 25/11/2026
Rp236.663
Rp173.003
Rp150.254
Rp130.257
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 83 nC - 55 C + 175 C 254 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 25/11/2026
Rp234.462
Rp171.352
Rp148.970
Rp129.156
Rp126.771
Min.: 1
Mult.: 1
Through Hole TO-247AD-3 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 84 nC - 55 C + 175 C 254 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
799Expected 14/04/2027
Rp187.129
Rp132.275
Rp110.076
Rp98.151
Min.: 1
Mult.: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 41 A 79 mOhms - 10 V, 22 V 2.9 V 58 nC - 55 C + 175 C 221 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
599Expected 14/04/2027
Rp202.907
Rp129.890
Rp112.828
Rp101.453
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
799Expected 14/04/2027
Rp170.434
Rp116.497
Rp95.950
Rp85.492
Min.: 1
Mult.: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 32 A 100 mOhms - 10 V, 22 V 2.9 V 47 nC - 55 C + 175 C 185 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
583Expected 14/04/2027
Rp186.028
Rp116.314
Rp100.353
Rp89.528
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 31 A 100 mOhms - 10 V, 22 V 2.9 V 45 nC - 55 C + 175 C 174 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 14/04/2027
Rp197.036
Rp109.526
Rp101.086
Rp86.226
Rp86.043
Min.: 1
Mult.: 1
Through Hole TO-247AD-4L 1 Channel 1.2 kV 18 A 200 mOhms - 10 V, + 22 V 3.1 V 25 nC - 55 C + 175 C 109 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
800Expected 14/04/2027
Cut Tape
Rp155.207
Rp84.208
Rp77.420
Rp62.743
Reel
Rp61.826
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7L 1 Channel 1.2 kV 12 A 313 mOhms - 10 V, + 22 V 3 V 15 nC - 55 C + 175 C 85 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 14/04/2027
Rp290.968
Rp168.049
Rp156.308
Rp141.081
Rp140.897
Min.: 1
Mult.: 1
Through Hole TO-247AD-3L 1 Channel 1.2 kV 53 A 54 mOhms - 10 V, + 22 V 2.9 V 69 nC - 55 C + 175 C 288 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
800Expected 25/12/2026
Rp228.591
Rp170.251
Rp141.815
Rp126.404
Min.: 1
Mult.: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 52 A 56 mOhms - 10 V, 22 V 2.8 V 82 nC - 55 C + 175 C 268 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 30/12/2026
Rp244.185
Rp179.424
Rp156.491
Rp135.393
Rp133.009
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 83 nC - 55 C + 175 C 254 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
800Expected 01/01/2027
Cut Tape
Rp210.429
Rp117.598
Rp113.195
Rp92.464
Reel
Rp92.280
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7L 1 Channel 1.2 kV 41 A 79 mOhms - 10 V, + 22 V 2.9 V 58 nC - 55 C + 175 C 221 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 30/12/2026
Rp209.328
Rp135.944
Rp118.148
Rp106.407
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
800Expected 25/12/2026
Cut Tape
Rp192.816
Rp106.957
Rp101.086
Rp82.557
Reel
Rp82.557
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7L 1 Channel 1.2 kV 32 A 100 mOhms - 10 V, + 22 V 2.9 V 47 nC - 55 C + 175 C 185 W Enhancement
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 30/12/2026
Rp190.431
Rp121.084
Rp105.123
Rp92.831
Min.: 1
Mult.: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 14/04/2027
Rp302.342
Rp175.204
Rp163.096
Rp148.236
Rp148.052
Min.: 1
Mult.: 1
Through Hole TO-247AD-3L 1 Channel 1.2 kV 53 A 54 mOhms - 10 V, + 22 V 2.9 V 69 nC - 55 C + 175 C 288 W Enhancement