TRSx65H SiC Schottky Barrier Diodes

Toshiba TRSx65H Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) are 650V devices based on third-generation technology utilizing Schottky metal. These components optimize the junction barrier Schottky (JBS) structure of the second-generation products, lowering the electric field at the Schottky interface and reducing leakage current, delivering enhanced efficiency. TRSx65H achieves a 17% lower forward voltage (1.2V typical) and improves trade-offs between the forward voltage and the total capacitive charge (17nC typical) than 2nd-Gen devices. With an enhanced forward voltage and reverse current ratio, a typical 1.1µA insulation resistance is achieved. Other features include forward DC current of up to 12A and square-wave non-repetitive surge currents of up to 640A.

Results: 12
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case If - Forward Current Vrrm - Repetitive Reverse Voltage Vf - Forward Voltage Ifsm - Forward Surge Current Ir - Reverse Current Packaging
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 8A DFN8x8 2.134In Stock
Cut Tape
Rp60.908,72
Rp31.738,58
Rp27.335,54
Rp24.583,64
Reel
Rp20.547,52
Rp19.079,84
Min.: 1
Mult.: 1
: 2.500
SMD/SMT DFN-8 8 A 650 V 1.2 V 410 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 4A DFN8x8 6.822In Stock
Cut Tape
Rp42.746,18
Rp20.730,98
Rp18.712,92
Rp17.905,70
Reel
Rp17.905,70
Rp12.401,90
Min.: 1
Mult.: 1
: 2.500
SMD/SMT DFN-8 4 A 650 V 1.2 V 230 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 6A DFN8x8 4.789In Stock
Cut Tape
Rp50.634,96
Rp24.950,56
Rp22.382,12
Rp20.730,98
Reel
Rp20.730,98
Rp15.594,10
Min.: 1
Mult.: 1
: 2.500
SMD/SMT DFN-8 6 A 650 V 1.2 V 310 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 10A DFN8x8 1.933In Stock
Cut Tape
Rp67.696,74
Rp36.141,62
Rp31.004,74
Rp28.619,76
Reel
Rp21.831,74
Rp21.464,82
Min.: 1
Mult.: 1
: 2.500
SMD/SMT DFN-8 10 A 650 V 1.2 V 510 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 3A TO-220-2L 1In Stock
Rp46.598,84
Rp27.152,08
Rp16.804,94
Rp15.520,72
Min.: 1
Mult.: 1
Through Hole TO-220-2L 3 A 650 V 1.2 V 170 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 12A DFN8x8 1.193In Stock
Cut Tape
Rp70.081,72
Rp40.911,58
Rp33.389,72
Rp32.472,42
Reel
Rp32.472,42
Rp24.400,18
Min.: 1
Mult.: 1
: 2.500
SMD/SMT DFN-8 12 A 650 V 1.2 V 640 A 2.4 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 10A TO-220-2L 50In Stock
Rp63.844,08
Rp32.105,50
Rp30.821,28
Rp23.299,42
Min.: 1
Mult.: 1
Through Hole TO-220-2L 10 A 650 V 1.2 V 510 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 12A TO-220-2L 63In Stock
150On Order
Rp69.898,26
Rp42.379,26
Rp35.224,32
Min.: 1
Mult.: 1
Through Hole TO-220-2L 12 A 650 V 1.2 V 640 A 2.4 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 4A TO-220-2L 208In Stock
Rp42.746,18
Rp20.730,98
Rp20.547,52
Rp17.758,93
Min.: 1
Mult.: 1
Through Hole TO-220-2L 4 A 650 V 1.2 V 230 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 6A TO-220-2L 127In Stock
Rp50.451,50
Rp24.767,10
Rp24.583,64
Rp22.382,12
Min.: 1
Mult.: 1
Through Hole TO-220-2L 6 A 650 V 1.2 V 310 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 8A TO-220-2L 21In Stock
Rp60.725,26
Rp30.087,44
Rp26.968,62
Rp26.785,16
Min.: 1
Mult.: 1
Through Hole TO-220-2L 8 A 650 V 1.2 V 410 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 2A TO-220-2L
172On Order
Rp40.544,66
Rp20.730,98
Rp14.768,53
Rp13.447,62
Min.: 1
Mult.: 1
Through Hole TO-220-2L 2 A 650 V 1.2 V 120 A 2 uA Tube