Results: 8
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 17 mohm G2 957In Stock
2.160On Order
Rp393.522
Rp293.903
Rp254.092
Rp240.516
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 97 A 17 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 26 mohm G2 530In Stock
2.160On Order
Rp290.234
Rp221.069
Rp184.194
Rp164.013
Rp153.373
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 69 A 25 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 289 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 40 mohm G2 1.519In Stock
240On Order
Rp228.224
Rp165.114
Rp137.595
Rp122.368
Rp114.479
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 48 A 40 mOhms - 10 V, + 25 V 5.1 V 39 nC - 55 C + 175 C 218 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 53 mohm G2 374In Stock
480Expected 14/12/2026
Rp189.514
Rp103.105
Rp95.216
Rp95.032
Rp92.647
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 38 A 53 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 12 mohm G2 53In Stock
3.360On Order
Rp525.246
Rp420.490
Rp363.618
Rp344.171
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 129 A 12 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 34 mohm G2 22In Stock
1.440On Order
Rp234.829
Rp130.073
Rp122.184
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 22 mohm G2
2.710On Order
Rp349.124
Rp266.017
Rp221.620
Rp197.403
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 80 A 22 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 78 mohm G2
2.860On Order
Rp168.967
Rp115.396
Rp95.216
Rp84.759
Rp79.255
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 28 A 78 mOhms - 10 V, + 25 V 5.1 V 21 nC - 55 C + 175 C 143 W Enhancement CoolSiC