Results: 2
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 Mfr.
Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Channel Mode
Tradename
Technology
EPC GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN
Datasheet
16.137In Stock
6.000Expected 04/11/2026
Cut Tape
Rp141.264,20
Rp76.869,74
Rp70.448,64
Rp66.962,90
Rp59.624,50
Reel
Rp51.552,26
Min.: 1
Mult.: 1
: 3.000
SMD/SMT QFN-5 N-Channel 1 Channel 100 V 101 A 1.2 mOhms - 4 V, 6 V 2.5 V 17 nC - 40 C + 150 C Enhancement eGaN FET GaN
EPC EPC2367A
EPC GaN FETs 100 V enhancement-mode GaN power transistor, 101 A, 1.2 mOhm typ RDS(on), optimized for high-density DC-DC converters and motor drives.
Datasheet
Non-Stocked
Rp129.706,22
Rp86.776,58
Rp69.714,80
Rp62.009,48
Rp49.717,66
Min.: 1
Mult.: 1