π-MOS IX Planar Power MOSFETs

Toshiba π-MOS IX Planar Power MOSFETs offer high-efficiency and low noise in a compact TO-220SIS package. π-MOS IX MOSFETs provide optimal performance due to the double-diffused process design adjustment. With an optimized chip design, the π-MOS IX components provide 5dB lower peak EMI noise than the previous π-MOS VII series, while maintaining the same efficiency level. These N-channel power MOSFETs offer high design flexibility, reducing workloads. In addition, the π-MOS IX series provides the same rated avalanche current and rated drain current (DC), making it simple to replace existing MOSFETs.

Results: 8
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Toshiba MOSFETs TO-220SIS PD=35W 1MHz PWR MOSFET TRNS 347In Stock
Rp29.353,60
Rp13.686,12
Rp12.145,05
Rp8.384,12
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 4 A 1.7 Ohms 30 V 4 V 16 nC - 55 C + 150 C 35 W Enhancement MOSIX Tube
Toshiba MOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS 340In Stock
Rp26.418,24
Rp12.236,78
Rp10.824,14
Rp7.246,67
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 3.5 A 2.2 Ohms 30 V 4 V 13 nC - 55 C + 150 C 30 W Enhancement MOSIX Tube
Toshiba MOSFETs N-Ch TT-MOSIX 600V 35W 740pF 6A 223In Stock
Rp26.051,32
Rp12.200,09
Rp12.181,74
Rp9.173,00
Min.: 1
Mult.: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 6 A 1.2 Ohms 30 V 2 V 21 nC + 150 C 35 W Enhancement MOSIX Tube
Toshiba MOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS 233In Stock
Rp20.180,60
Rp9.319,77
Rp9.301,42
Rp6.421,10
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 2 A 4.1 Ohms 30 V 4 V 8 nC - 55 C + 150 C 30 W Enhancement MOSIX Tube
Toshiba MOSFETs N-Ch TT-MOSIX 600V 45W 1320pF 11A 211In Stock
Rp31.371,66
Rp14.915,30
Rp14.896,95
Rp11.906,55
Min.: 1
Mult.: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 11 A 650 mOhms 30 V 2 V 34 nC + 150 C 45 W Enhancement MOSIX Tube
Toshiba MOSFETs N-Ch TT-MOSIX 600V 40W 1130pF 10A 683In Stock
Rp33.389,72
Rp15.905,98
Rp14.181,46
Rp11.686,40
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 10 A 750 mOhms 30 V 2 V 30 nC - 55 C + 150 C 40 W Enhancement MOSIX Tube
Toshiba MOSFETs TO-220SIS PD=40W 1MHz PWR MOSFET TRNS
190Expected 25/12/2026
Rp36.875,46
Rp17.703,89
Rp15.740,87
Rp12.530,32
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7.5 A 1 Ohms 30 V 4 V 24 nC - 55 C + 150 C 40 W Enhancement MOSIX Tube
Toshiba MOSFETs N-Ch TT-MOSIX 600V 30W 490pF 3.7A Non-Stocked Lead-Time 16 Weeks
Rp29.170,14
Rp18.107,50
Rp11.924,90
Rp9.374,81
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 3.7 A 1.9 Ohms 30 V 2 V 14 nC - 55 C + 150 C 30 W Enhancement MOSIX Tube