AFGHL50T65SQDC

onsemi
863-AFGHL50T65SQDC
AFGHL50T65SQDC

Mfr.:

Description:
IGBTs Hybrid iGBT 650V 50A FS4 with SiC-SBD

Lifecycle:
Factory Special Order:
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Datasheet:
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Learn more about onsemi AFGHL50T65SQDC

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: IGBTs
RoHS:  
REACH - SVHC:
SiC
TO-247-3
Through Hole
Single
650 V
1.6 V
- 20 V, 20 V
100 A
268 W
- 55 C
+ 175 C
AFGHL50T65SQDC
AEC-Q101
Tube
Brand: onsemi
Continuous Collector Current Ic Max: 100 A
Gate-Emitter Leakage Current: 400 nA
Product Type: IGBTs
Factory Pack Quantity: 30
Subcategory: Transistors
Tradename: EliteSiC
Unit Weight: 7,326 g
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Korea, Republic of
The country is subject to change at the time of shipment.

AFGHL50T65SQDC Hybrid IGBT

onsemi AFGHL50T65SQDC Hybrid IGBT offers optimum performance with both low conduction and switching losses. The AFGHL50T65SQDC features 50A current and 650V collector to emitter voltage. The device is ideal for high-efficiency operations in various applications, specifically totem pole bridgeless PFC and inverters. The AFGHL50T65SQDC Hybrid IGBT is AEC-Q100 qualified for automotive applications.

In Stock: 814

Stock:
814 Can Dispatch Immediately
Factory Lead Time:
23 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 814 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp226.756,56 Rp226.756,56
Rp135.943,86 Rp1.359.438,60
Rp119.615,92 Rp14.353.910,40

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