Results: 43
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging

Infineon Technologies MOSFETs HIGH POWER_NEW 480In Stock
Rp291.701,40
Rp165.297,46
Rp164.013,24
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 77 A 24 mOhms 20 V 4 V 183 nC - 55 C + 150 C 320 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 614In Stock
Rp229.325,00
Rp126.770,86
Rp119.982,84
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 63 A 26 mOhms 20 V 3.5 V 141 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 1.376In Stock
2.640Expected 23/09/2027
Rp145.667,24
Rp76.869,74
Rp70.632,10
Rp65.862,14
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 57 mOhms 20 V 3.5 V 67 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 2.756In Stock
Rp128.972,38
Rp68.980,96
Rp63.110,24
Rp59.991,42
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 90 mOhms 20 V 3.5 V 51 nC - 55 C + 150 C 125 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 284In Stock
720On Order
Rp200.521,78
Rp109.158,70
Rp101.086,46
Rp100.536,08
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 68.5 A 41 mOhms 20 V 4 V 102 nC - 55 C + 150 C 500 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 61In Stock
Cut Tape
Rp165.480,92
Rp91.546,54
Rp84.208,14
Rp82.740,46
Reel
Rp73.934,38
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 38 A 55 mOhms 20 V 4.5 V 79 nC - 55 C + 150 C 178 W Enhancement Reel, Cut Tape

Infineon Technologies MOSFETs HIGH POWER_NEW 160In Stock
240Expected 10/12/2026
Rp180.891,56
Rp118.698,62
Rp86.776,58
Rp86.593,12
Rp84.024,68
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 55 mOhms 20 V 3.5 V 79 nC - 55 C + 150 C 178 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 752In Stock
Rp68.614,04
Rp44.764,24
Rp32.472,42
Rp27.335,54
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 8 A 144 mOhms 20 V 3.5 V 28 nC - 55 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW 338In Stock
Rp62.192,94
Rp31.188,20
Rp28.069,38
Rp22.565,58
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 6 A 237 mOhms 20 V 3.5 V 18 nC - 55 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 748In Stock
Rp68.430,58
Rp34.490,48
Rp31.188,20
Rp25.317,48
Rp24.583,64
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 14 A 144 mOhms 20 V 3.5 V 28 nC - 55 C + 150 C 75 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 41In Stock
500Expected 10/12/2026
Rp148.786,06
Rp80.355,48
Rp73.750,92
Rp67.696,74
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 36 A 60 mOhms 10 V 4.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 114In Stock
240Expected 01/03/2027
Rp106.957,18
Rp54.671,08
Rp49.901,12
Rp43.480,02
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 125 mOhms 20 V 3.5 V 36 nC - 55 C + 150 C 92 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 151In Stock
Rp276.290,76
Rp155.574,08
Rp152.822,18
Min.: 1
Mult.: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 69 A 29 mOhms 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 517In Stock
Cut Tape
Rp103.287,98
Rp53.937,24
Rp52.469,56
Rp46.598,84
Rp43.113,10
Reel
Rp41.645,42
Min.: 1
Mult.: 1
: 2.000
Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 28 A 90 mOhms 20 V 4 V 42 nC - 55 C + 150 C 160 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW
4.000Expected 04/02/2027
Cut Tape
Rp231.526,52
Rp167.498,98
Rp139.613,06
Rp124.385,88
Reel
Rp117.597,86
Min.: 1
Mult.: 1
: 2.000
Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 67 A 35 mOhms 20 V 4 V 109 nC - 55 C + 150 C 351 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW
500Expected 03/06/2027
Rp87.143,50
Rp45.131,16
Rp40.911,58
Rp33.389,72
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 16 A 145 mOhms 20 V 3.5 V 31 nC - 55 C + 150 C 83 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW Non-Stocked Lead-Time 19 Weeks
Cut Tape
Rp88.978,10
Rp47.516,14
Rp43.296,56
Rp36.875,46
Rp35.407,78
Reel
Rp33.022,80
Min.: 1
Mult.: 1
: 2.000
Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 21 A 125 mOhms 20 V 4 V 8 nC - 55 C + 150 C 127 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs HIGH POWER_NEW Non-Stocked Lead-Time 8 Weeks
Rp90.078,86
Rp45.314,62
Rp42.562,72
Rp40.361,20
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 14 A 144 mOhms 20 V 3.5 V 28 nC - 55 C + 150 C 75 W Enhancement CoolMOS Tube