NVBG080N120SC1

onsemi
863-NVBG080N120SC1
NVBG080N120SC1

Mfr.:

Description:
SiC MOSFETs SIC MOS D2PAK-7L 80MOHM 1200V

Datasheet:
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Learn more about onsemi NVBG080N120SC1

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
SMD/SMT
D2PAK-7
1 Channel
1.2 kV
30 A
110 mOhms
- 15 V, + 25 V
4.3 V
56 nC
- 55 C
+ 175 C
179 W
Enhancement
AEC-Q101
EliteSiC
Brand: onsemi
Configuration: Single
Fall Time: 9 ns
Forward Transconductance - Min: 11 S
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product Type: SiC MOSFETS
Series: NVBG080N120SC1
Factory Pack Quantity: 800
Subcategory: Transistors
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 21 ns
Typical Turn-On Delay Time: 12 ns
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Attributes selected: 0

Datasheet

PCN

Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Korea, Republic of
The country is subject to change at the time of shipment.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.

1200V EliteSiC (Silicon Carbide) MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V EliteSiC MOSFETs provide system benefits, including high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, and low capacitance and operate at -55°C to +175°C temperature range. The 1200V SiC MOSFETs are AEC-Q101 automotive qualified and are RoHS compliant. These MOSFETs are suited for boost inverters, charging stations, DC-DC inverters, DC-DC converters, onboard chargers (OBCs), motor control, industrial power supplies, and server power supplies.

NVBG080N120SC1 1200V SiC MOSFET

onsemi NVBG080N120SC1 1200V SiC MOSFET provides superior switching performance and higher reliability than Silicon. This MOSFET has a low ON resistance and compact chip size, ensuring low capacitance and gate charge. onsemi NVBG080N120SC1 MOSFET features high efficiency, fast operation frequency, increased power density, reduced electromagnetic interference (EMI), and reduced system size. Typical applications include automotive onboard chargers and automotive DC/DC converters for EV/HEV.

In Stock: 1.930

Stock:
1.930 Can Dispatch Immediately
Factory Lead Time:
44 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 1930 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 800)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp222.720 Rp222.720
Rp125.120 Rp1.251.200
Rp122.001 Rp12.200.100
Rp115.396 Rp57.698.000
Full Reel (Order in multiples of 800)
Rp115.396 Rp92.316.800
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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