LMG5200 80V GaN Half-Bridge Power Stage

Texas Instruments LMG5200 80V GaN Half-Bridge Power Stage provides an integrated power stage solution using enhancement-mode gallium nitride (GaN) FETs. The device consists of two 80V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance C_ISS. All the devices are mounted on a completely bond wire-free package platform with minimised package parasitic elements. The TTL logic-compatible inputs can withstand input voltages of up to 12V regardless of the V_CC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.