IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [RDS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (ID) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (VDSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).

Results: 13
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
IXYS SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L 900In Stock
Cut Tape
Rp238.131,08
Rp134.843,10
Rp133.008,50
Rp126.037,02
Reel
Rp126.037,02
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7L 1 Channel 650 V 111 A 33 mOhms - 5 V, + 20 V 4.5 V 125 nC - 55 C + 175 C 600 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TO263 894In Stock
Cut Tape
Rp143.282,26
Rp97.050,34
Rp70.815,56
Reel
Rp63.844,08
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7 1 Channel 1.2 kV 20 A 208 mOhms - 5 V, 20 V 4.5 V 29 nC - 55 C + 175 C 136 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TO263-7L 870In Stock
Cut Tape
Rp163.646,32
Rp89.345,02
Rp82.190,08
Rp76.135,90
Reel
Rp76.135,90
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7 1 Channel 650 V 43 A 78 mOhms - 5 V, 20 V 4.5 V 64 nC - 55 C + 175 C 174 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TO263-7L 900In Stock
Cut Tape
Rp198.136,80
Rp110.076,00
Rp104.755,66
Rp97.967,64
Reel
Rp97.967,64
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7 1 Channel 650 V 60 A 53 mOhms - 5 V, 20 V 4.5 V 94.7 nC - 55 C + 175 C 249 W Enhancement
IXYS SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L 813In Stock
Cut Tape
Rp218.684,32
Rp144.016,10
Rp130.073,14
Rp118.331,70
Reel
Rp108.424,86
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7L 1 Channel 1.2 kV 65 A 53 mOhms - 5 V, + 20 V 4.5 V 110 nC - 55 C + 175 C 417 W Enhancement
IXYS SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TOLL 2.084In Stock
Cut Tape
Rp238.131,08
Rp134.843,10
Rp133.008,50
Rp124.385,88
Reel
Rp124.385,88
Min.: 1
Mult.: 1
: 2.000
SMD/SMT TOLL-8 1 Channel 650 V 111 A 33 mOhms - 5 V, + 20 V 4.5 V 125 nC - 55 C + 175 C 600 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TOLL 2.095In Stock
Cut Tape
Rp161.811,72
Rp88.244,26
Rp81.089,32
Rp80.172,02
Rp75.952,44
Reel
Rp75.952,44
Min.: 1
Mult.: 1
: 2.000
SMD/SMT TOLL-8 1 Channel 650 V 43 A 78 mOhms - 5 V, 20 V 4.5 V 64 nC - 55 C + 175 C 174 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TOLL 2.090In Stock
Cut Tape
Rp195.751,82
Rp108.791,78
Rp103.104,52
Rp97.600,72
Reel
Rp97.600,72
Min.: 1
Mult.: 1
: 2.000
SMD/SMT TTOLL-8 1 Channel 650 V 60 A 53 mOhms - 5 V, 20 V 4.5 V 94.7 nC - 55 C + 175 C 249 W Enhancement
IXYS SiC MOSFETs 650V 25mohm (100A a. 25C) SiC MOSFET in TO247-4L 520In Stock
Rp242.534,12
Rp137.595,00
Rp127.504,70
Min.: 1
Mult.: 1
Through Hole TO-247-4L 1 Channel 650 V 99 A 33 mOhms - 5 V, + 20 V 4.5 V 125 nC - 55 C + 175 C 454 W Enhancement
IXYS SiC MOSFETs TO247 1200V N CH 20A 542In Stock
Cut Tape
Rp136.494,24
Rp73.200,54
Rp59.807,96
Reel
Rp59.807,96
Min.: 1
Mult.: 1
: 450
Through Hole TO-247-4 1 Channel 1.2 kV 20 A 208 mOhms - 5 V, 20 V 4.5 V 29 nC - 55 C + 175 C 136 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TO247-4L HV 550In Stock
Rp166.214,76
Rp90.812,70
Rp78.704,34
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 43 A 78 mOhms - 5 V, 20 V 4.5 V 64 nC - 55 C + 175 C 174 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TO247-4L HV 550In Stock
Rp199.604,48
Rp137.595,00
Rp99.985,70
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 60 A 53 mOhms - 5 V, 20 V 4.5 V 94.7 nC - 55 C + 175 C 249 W Enhancement
IXYS SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L 537In Stock
Cut Tape
Rp223.270,82
Rp144.199,56
Rp133.742,34
Reel
Rp116.680,56
Rp111.543,68
Min.: 1
Mult.: 1
: 450
Through Hole TO-247-4L 1 Channel 1.2 kV 65 A 52 mOhms - 5 V, + 20 V 4.5 V 110 nC - 55 C + 175 C 375 W Enhancement