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|
MOSFETs HIGH POWER_NEW
- IPDD60R080G7XTMA1
- Infineon Technologies
-
1:
Rp144.566
-
1.158In Stock
|
Mouser Part No
726-IPDD60R080G7XTM1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
1.158In Stock
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|
Min.: 1
Mult.: 1
:
1.700
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|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
29 A
|
80 mOhms
|
20 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
174 W
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Enhancement
|
|
Reel, Cut Tape, MouseReel
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|
|
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MOSFETs HIGH POWER NEW
- IPT60R028G7XTMA1
- Infineon Technologies
-
1:
Rp351.326
-
1.360In Stock
-
2.000Expected 28/01/2027
|
Mouser Part No
726-IPT60R028G7XTMA1
|
Infineon Technologies
|
MOSFETs HIGH POWER NEW
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|
1.360In Stock
2.000Expected 28/01/2027
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|
Min.: 1
Mult.: 1
:
2.000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
75 A
|
28 mOhms
|
20 V
|
3 V
|
123 nC
|
- 55 C
|
+ 150 C
|
391 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
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|
|
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MOSFETs HIGH POWER NEW
- IPT60R102G7XTMA1
- Infineon Technologies
-
1:
Rp110.993
-
1.097In Stock
|
Mouser Part No
726-IPT60R102G7XTMA1
|
Infineon Technologies
|
MOSFETs HIGH POWER NEW
|
|
1.097In Stock
|
|
Min.: 1
Mult.: 1
:
2.000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
23 A
|
88 mOhms
|
20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
141 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPDD60R125G7XTMA1
- Infineon Technologies
-
1:
Rp107.691
-
143In Stock
|
Mouser Part No
726-IPDD60R125G7XTM1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
143In Stock
|
|
Min.: 1
Mult.: 1
:
1.700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
125 mOhms
|
20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
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|
Reel, Cut Tape
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPT60R050G7XTMA1
- Infineon Technologies
-
1:
Rp208.777
-
14In Stock
-
2.000Expected 29/04/2027
|
Mouser Part No
726-IPT60R050G7XTMA1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
14In Stock
2.000Expected 29/04/2027
|
|
Min.: 1
Mult.: 1
:
2.000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
44 A
|
50 mOhms
|
20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
245 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPT60R080G7XTMA1
- Infineon Technologies
-
1:
Rp137.962
-
43In Stock
|
Mouser Part No
726-IPT60R080G7XTMA1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
43In Stock
|
|
Min.: 1
Mult.: 1
:
2.000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
29 A
|
80 mOhms
|
30 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
167 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPDD60R150G7XTMA1
- Infineon Technologies
-
1:
Rp93.748
-
8In Stock
-
End of Life
|
Mouser Part No
726-IPDD60R150G7XTM1
End of Life
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
8In Stock
|
|
Min.: 1
Mult.: 1
:
1.700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
150 mOhms
|
20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPDD60R050G7XTMA1
- Infineon Technologies
-
1:
Rp200.522
-
1.700Expected 16/09/2027
|
Mouser Part No
726-IPDD60R050G7XTM1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
1.700Expected 16/09/2027
|
|
Min.: 1
Mult.: 1
:
1.700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
47 A
|
50 mOhms
|
20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPDD60R190G7XTMA1
- Infineon Technologies
-
1:
Rp68.798
-
3.400Expected 04/02/2027
|
Mouser Part No
726-IPDD60R190G7XTM1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
3.400Expected 04/02/2027
|
|
Min.: 1
Mult.: 1
:
1.700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
190 mOhms
|
20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
76 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFETs HIGH POWER NEW
- IPT60R125G7XTMA1
- Infineon Technologies
-
2.000:
Rp36.325
-
Non-Stocked Lead-Time 53 Weeks
-
NRND
|
Mouser Part No
726-IPT60R125G7XTMA1
NRND
|
Infineon Technologies
|
MOSFETs HIGH POWER NEW
|
|
Non-Stocked Lead-Time 53 Weeks
|
|
Min.: 2.000
Mult.: 2.000
:
2.000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
108 mOhms
|
20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel
|
|